Mr. Ruei-Lien Sun Profile

Ruei-Lien Sun

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Proceedings Article | 30 September 2022 Paper

Enhancement of the detection limit of the metal-semiconductor silicon-based photodetector in the mid-infrared range

Deepali Sinha, Ruei-Lien Sun, Ashish Gaurav, Ching-Fuh Lin

Proceedings Volume 12234, 1223409 (2022) https://doi.org/10.1117/12.2633225

KEYWORDS: Signal detection, Silicon, Photodetectors, Mid-IR

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Current mid-infrared detection technologies dominating the market are mainly based on group III-V semiconductors. These devices have detection range depending upon the materials and also drawbacks like complex and expensive fabrication process, and incompatibility with CMOS processes. To overcome these complexities, silicon-based photodetectors using low cost approaches offer the excellent alternative. The current commercialized silicon-based detector technologies exhibit detection capabilities up to 1100 nm. Here, we have presented a metal–semiconductor silicon-based detectors showing a wider detection range extending from visible light to mid-infrared region. In this work, we investigate a silicon based Schottky diode photodetectors with a thin Ag film of thickness 10 nm over a silicon substrate for detecting radiation emitted from mid-infrared light source. Using lock-in amplifier for further measurement, not only the quality of signal was increased, the detection range of the device is enhanced up-to 5300 nm, which is far beyond the current limit of silicon-based detectors. Hence, the Schottky device used in this study has the potential to detect radiation up to mid-infrared wavelengths. On the other hand, the relative level of noise generated also increases with wavelength, so the detection signal gets buried. These signals have been successfully extracted and analyzed using the technology of Lock-in Amplifier.

Proceedings Article | 1 August 2021 Presentation + Paper

Hot carrier induced photothermal effect on metal-semiconductor Schottky junction

Ruei-Lien Sun, Hsin-Han Lai, Ching-Fuh Lin

Proceedings Volume 11831, 1183104 (2021) https://doi.org/10.1117/12.2593817

KEYWORDS: Sensors, Silicon, Diodes, Signal detection, Interfaces, Photothermal effect, Photons, Light sources, Semiconductors, Mid-IR

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Recent progress in plasmonic absorption devices provides a new way of photon-electron conversion through hot carrier emission if a carrier possesses sufficient energy to overcome the Schottky barrier. However, the behavior of carriers with energy lower than that of the barrier has rarely been discussed, while it could be very useful if the energy is converted efficiently. Very recently, the photothermal effect, which used to be treated as an energy loss, is used to detect low energy photons. Here, we systematically and quantitatively analyzed the mechanism of this effect, which, to the best of our knowledge, has not yet been determined stringently. A very thin layer of Ni is deposited on n-type Si (n-Si) with an electron-beam evaporator, and annealed by rapid thermal processer to form a NiSi/n-Si Schottky junction. The device was measured under intermittent light illumination with several incident power and bias. Under 0.05 V forward bias, the device generates a photothermal assisted response, which is boosted by 23% of the traditional photoelectric response at 1550 nm in 5 s. The response in different incident wavelengths is also presented in this work. The photothermal response is caused by low energy carriers, which dissipates thermally and heats the interface locally, causing the change of the electrical characteristics of the device. This effect could be used to detect signals regardless of wavelength and has a potential in future low energy photon conversion technology.

Proceedings Article | 12 April 2021 Poster + Paper

Silicide-based photodetectors with localized surface plasmon resonance for mid-IR detection

Hong-Jhang Syu, Hsin-Han Lai, Ruei-Lien Sun, Ching-Fuh Lin

Proceedings Volume 11741, 117411S (2021) https://doi.org/10.1117/12.2586050

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Nowadays, infrared (IR) photodetectors are mainly made from compound semiconductors due to the bandgap flexibility. However, compound semiconductors are mostly synthesized by expensive and energy-intensive epitaxy processes. Moreover, compound semiconductors are difficult to integrate with Si-based IC industry. Therefore, we used n-type Si (n-Si) wafers and thin NiSi to combine with localized surface plasmon resonance (LSPR) to form a Schottky IR detector. The incident IR light can induce thermionic effect to generate photocurrent, and the LSPR can enhance the light absorption and improve the photoresponse. The LSPR was created by NiSi covered inverted-pyramid array structures (IPAS) formed on n-Si substrates through photolithography and etching processes. After IPAS were prepared, 10-nm-thick Ni was thermally deposited on the IPAS and then the entire samples were annealed under 500 °C in 5 s to form NiSi/n-Si Schottky junctions. Finally, Ti and Au were thermally deposited successively on the NiSi and the back of n-Si wafers to be electrodes. A planar device was also prepared to be a control part. The photodetection ability of the device was examined by a 4.8-μm IR source with 1.8-mW optical power, which is in the absorption range of carbon monoxide. The IR source was turned on/off for each 15 s. Consequently, the planar NiSi/n-Si Schottky photodetector shows average 9.37-μA current change under 4.8-μm IR source illumination in 15 s. However, if 8-μm-period IPAS was used, the average current change improved to 30.9 μA. The response enhancement is 3.30 times of the planar device.

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