A new type of GaAs/GaAlAs infrared photodetectors based on a new physics mechanism has been designed. Its simulation, manufacture, experiment measurements and analyses have been performed. Some novel important characteristics are obtained which are compared with the conventional GaAs/GaAlAs quantum well infrared photodetectors, such as, its low dark current, large absorption bandwidth, high response speed, low noise, and the choice of suitable operation bias. From our elementary work, the novel features of this kind of device will be very attractive in the application.
The simulation of a new type of GaAs/GaAlAs quantum well infrared photodetectors based on a new physics mechanism has been performed. The essential work is concentrated on the device parameters' influence on the energy levels and absorption peaks, they would have important effects on device design. Moreover, a new characteristics-infrared detector with bias-tuned wavelength is proposed.
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