Prof. Russell D. Dupuis
Endowed Chair at Georgia Institute of Technology
SPIE Involvement:
Conference Program Committee | Author
Publications (21)

PROCEEDINGS ARTICLE | September 18, 2018
Proc. SPIE. 10766, Infrared Sensors, Devices, and Applications VIII
KEYWORDS: Near infrared, Photodetectors, Avalanche photodetectors, Sensors, Ultraviolet radiation, Germanium, Gallium nitride, Detector development, Metalorganic chemical vapor deposition

PROCEEDINGS ARTICLE | April 19, 2017
Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII
KEYWORDS: Light emitting diodes, Ultraviolet radiation, Photons, Semiconductor lasers, Process control, Distributed Bragg reflectors, Laser damage threshold, Vertical cavity surface emitting lasers, Optical microcavities, Oxidation

PROCEEDINGS ARTICLE | February 26, 2016
Proc. SPIE. 9748, Gallium Nitride Materials and Devices XI
KEYWORDS: Light emitting diodes, Metals, Ultraviolet radiation, Silicon, Resistance, Reflectivity, Gallium nitride, Vertical cavity surface emitting lasers, Metalorganic chemical vapor deposition, Applied physics

PROCEEDINGS ARTICLE | August 28, 2015
Proc. SPIE. 9609, Infrared Sensors, Devices, and Applications V
KEYWORDS: Avalanche photodetectors, Cameras, Ultraviolet radiation, Crystals, Reliability, Gallium nitride, Sapphire, Avalanche photodiodes, UV optics, Absorption

PROCEEDINGS ARTICLE | February 27, 2014
Proc. SPIE. 9002, Novel In-Plane Semiconductor Lasers XIII
KEYWORDS: Reflectors, Deep ultraviolet, Ultraviolet radiation, Coating, Reflectivity, Aluminum, Aluminum nitride, Laser damage threshold, Optical pumping, Metalorganic chemical vapor deposition

PROCEEDINGS ARTICLE | September 19, 2013
Proc. SPIE. 8868, Infrared Sensors, Devices, and Applications III
KEYWORDS: Target detection, Signal to noise ratio, Avalanche photodetectors, Sensors, Ultraviolet radiation, Gallium nitride, Metalorganic chemical vapor deposition, Pulsed laser operation, Ultraviolet detectors, Atmospheric modeling

Showing 5 of 21 publications
Conference Committee Involvement (1)
GaN Materials and Devices
23 January 2006 | San Jose, California, United States
SIGN IN TO:
  • View contact details

UPDATE YOUR PROFILE
Is this your profile? Update it now.
Don’t have a profile and want one?

Back to Top