One of technical issues of directed self-assembly lithography is extremely narrow patterning range. It is really difficult to make not only smaller patterns (pitch of less than 30nm) because of self-assembling limit but also middle patterns (pitch of more than 60nm) because of material synthesis issues. This paper describes wide–range directed self-assembly lithography which enables not only narrow patterns but also wide patterns using newly developed block copolymer. One block of the new block copolymer is easily metalized selectively by metalize technology and it is confirmed that dry etching resistance is markedly improved.
In next generation lithography to make sub-15nm pattern, Directed self-assembly (DSA) and Nano-imprint lithography (NIL) are proposed. The current DSA process is complicated and it is difficult to decrease width and line edge roughness of a guide pattern for sub-15nm patterning. In the case of NIL, it is difficult to make the master template having sub- 15nm pattern. This paper describes cost-effective lithography process for making sub-15nm pattern using DSA on a guide pattern replicated by Nano-imprinting (NIL + DSA). Simple process for making sub-15nm pattern is proposed. The quartz templates are made and line/space patterns of half pitch (hp) 12nm and hp9.5nm are obtained by NIL + DSA.
Bit-patterned media (BPM) is a candidate for high-density magnetic recording media. Directed self-assembly
(DSA) is expected to be a solution for the fabrication process of high-density BPM. A BPM with 20 nm-pitch
dot pattern is fabricated. A 100 nm-pitch triangle lattice dot pattern, which is fabricated by EB lithography, is
used as a guide post to order PS-PDMS self-assembled diblock co-polymer with 20 nm pitch. Dot-pitch
fluctuation and linearity of pseudo dot tracks are estimated. The standard deviation of the dot-pitch variation
including the post guide is 8% of the self-assembled dot pitch. The dot-position deviation is estimated to be
about 8% of the pseudo dot track pitch. In both cases, variation of the size and pitch of the post guides is
found to increase the dot-pitch fluctuation and dot-position deviation from pseudo dot-track.
Bit patterned media (BPM) is a promising candidate for next-generation magnetic recording media beyond 2.5 Tb/in2.
To realize such high-density patterned media, directed self-assembling (DSA) technology is a possible solution to form
fine dots. In order to read and write magnetic signals on a magnetic dot of magnetic media, the position of magnetic dots
must be controlled. We examined ordering of directed self-assembly of diblock copolymer dots with a variety of prepatterned
guides in some conditions and evaluated the ordering of the dots by using Delaunay triangulation and Voronoi diagram. Applying the optimized conditions, we obtained highly controlled dot pattern suitable for magnetic recording media.
Bit patterned media (BPM) is a promising candidate for high-density magnetic recording media beyond 2.5 Tb/in2. To
realize such a high-density BPM, directed self-assembling (DSA) technology is a possible solution. On the other hand,
from the viewpoint of low-cost production, nanoimprint lithography is a promising process for the mass-production of
such a high-density BPM. We examine the replication of the BPM etching mask by UV nanoimprint process. At first, the
BPM silicon master mold consisting of servo pattern with dot array is made by the DSA method using PS-PDMS. For
the 30-nm pitch corresponding to the density of 2.5 Tb/in2, the nickel stamper is replicated from the silicon master mold
by electroplating. The etching mask is transcribed by the UV nanoimprint process with the transparent mold replicated
from the nickel mother stamper. On the other hand, as for the DSA-BPM pattern of 17-nm pitch corresponding to the
density of 2.5 Tb/in2, we adopt an alternative process and confirm the replication possibility.
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