We study the effect of charge state conversion of nitrogen vacancy (NV) centers on the local density of states (LDOS) induced modifications in emission lifetime. The pump-dependent decay rates reveal two power regimes according to the dominance of photoionization of NV centers or the effect of LDOS. The extent of lifetime modification is achieved at low pump power, whereby the emission rate of zero phonon line is enhanced and the rate of phonon sideband emission is suppressed. At high pump power, the effect of modified emission rate is demeaned due to increased photoionization of NV centers.
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