Dr. Sadhvikas Addamane Profile

Dr. Sadhvikas Addamane

Research Asst. at Univ of New Mexico

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Publications (8)

PROCEEDINGS ARTICLE | February 15, 2018

Degradation mechanism of SESAMs under intense ultrashort pulses in modelocked VECSELs

Proc. SPIE. 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII

KEYWORDS: Semiconductors, Indium gallium arsenide, Quantum wells, Femtosecond phenomena, Mode locking, Gallium arsenide, Reflectivity, Transmission electron microscopy, Laser damage threshold, Absorption

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PROCEEDINGS ARTICLE | February 15, 2018

Structure and cavity geometry optimization for ultrashort and high power pulse generation from a VECSEL

Proc. SPIE. 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII

KEYWORDS: Semiconductors, Ultrafast phenomena, Refractive index, Quantum wells, Mode locking, Silicon, Coating, Reflectivity, Structural design, Pulsed laser operation

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PROCEEDINGS ARTICLE | August 30, 2017

Distance and temperature dependent plasmon-enhanced carrier generation and diffusion in InAs/InGaAs/GaAs near-infrared photodetectors

Proc. SPIE. 10404, Infrared Sensors, Devices, and Applications VII

KEYWORDS: Infrared detectors, Infrared sensors, Photodetectors, Surface plasmons, Indium arsenide, Sensors, Gallium arsenide, Diffusion, Quantum dots, Near field

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PROCEEDINGS ARTICLE | February 22, 2017

Multi-angle VECSEL cavities for dispersion control and multi-color operation

Proc. SPIE. 10087, Vertical External Cavity Surface Emitting Lasers (VECSELs) VII

KEYWORDS: Optical filters, Antireflective coatings, Fabry–Perot interferometers, Quantum wells, Continuous wave operation, Femtosecond phenomena, Polarization, Mode locking, Laser development, Terahertz radiation, Vertical external cavity surface emitting lasers

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PROCEEDINGS ARTICLE | November 2, 2016

Effect of AlSb quantum dots on efficiency of GaAs solar cell (Conference Presentation)

Proc. SPIE. 9937, Next Generation Technologies for Solar Energy Conversion VII

KEYWORDS: Solar energy, Sun, Solar cells, Gallium arsenide, Quantum efficiency, Quantum dots, Current controlled current source, Absorption

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PROCEEDINGS ARTICLE | March 10, 2016

Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

Proc. SPIE. 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI

KEYWORDS: Semiconductors, Ultrafast phenomena, Laser sources, Mirrors, Quantum wells, Femtosecond phenomena, Mode locking, Reflectivity, Fiber lasers, Ytterbium, Measurement devices, Picosecond phenomena, Carrier dynamics, Laser beam diagnostics

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PROCEEDINGS ARTICLE | February 26, 2013

TEM based analysis of III-Sb VECSELs on GaAs substrates for improved laser performance

Proc. SPIE. 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III

KEYWORDS: Quantum wells, Interfaces, Gallium arsenide, Image resolution, Gallium antimonide, Semiconductor lasers, Transmission electron microscopy, Phonons, Neodymium

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PROCEEDINGS ARTICLE | February 26, 2013

Investigation of InAs quantum dashes for 1.45-2.1 µm vertical external cavity surface emitting laser active regions

Proc. SPIE. 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III

KEYWORDS: Quantum wells, Indium arsenide, Etching, Crystals, Gallium arsenide, Gallium antimonide, Quantum dots, Transmission electron microscopy, Semiconducting wafers, Electroluminescent displays

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Showing 5 of 8 publications

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