Recent work on the exciton-photon coupling is presented. The proposed structure is a two-coupled semiconductor microcavity, composed of distributed Bragg reflectors, each consists of Si3N4 / SiO2, AlAs / Al0.1Ga0.9As, and GaAs/AlAs. Assuming that armchair graphene nanoribbon is located in the maximum of electric field amplitude inside the first semiconductor microcavity, the transfer matrix method is used to obtain the upper and lower polariton (UP and LP) branches and angle-dependent reflectance spectrum. A clear anticrossing between the neutral excitons and the cavity modes is observed for different polarization states. The obtained magnitude of splitting from the results is 10 to 12 meV, which indicates the possibility of enhancing the vacuum Rabi splitting for the proposed structure. This can pave the ways toward implementation of graphene in polaritonic devices.
Large built-in piezoelectric fields in nitride nanostructures, because of their wurtzite structure, induce a spatial
seperation between confined electrons and holes and lead to formation of electric dipoles. This paper investigates
the effects of exciton-exciton interaction as a dipolar interaction in a GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N microdisk. We show how
this interaction result in biexciton binding energies in the meV energy range. Also we study the effect of disk
radius on exciton binding energy. Results show that the exciton binding energy in smaller disks, is larger than
the bigger one.