KEYWORDS: Signal to noise ratio, Electronics, Oscillators, Interference (communication), Receivers, Telecommunications, Field effect transistors, Orthogonal frequency division multiplexing, Performance modeling, Systems modeling
Phase noise may be regarded as the most severe cause of performance degradation in OFDM systems. Hot carriers (HCs), found in the CMOS synchronization circuits, are high-mobility charge carriers that degrade the MOSFET devices’ performance by increasing the threshold voltage required to operate the MOSFETs. The HC effect manifests itself as the phase noise, which increases with the continued MOSFET operation and results in the performance degradation of the Voltage-Controlled Oscillator (VCO) built on the MOSFET. The HC effect is particularly evident in the short-channel MOSFET devices. The MOSFET instability will impact on the OFDM system performance. The relationship between the OFDM system performance and the hot carrier effect can be analyzed in terms of a crucial parameter, the MOSFET threshold voltage. In this paper, we derive a general phase noise model for OFDM systems based on the Hot-carrier effect and the corresponding drifted threshold voltage in differential ring oscillators. The expected OFDM performance degradation due to the hot carrier effect is provided through our simulations. We show that the OFDM BER performance evaluation using the existing phase noise models can be upto three orders of magnitude different from the results obtained by using our phase noise model.