Chilas develops off-the-shelf laser sources based on hybrid integration of Photonic Integrated Chips (PICs). Combining the high optical powers of semiconducting optical amplifiers (SOAs) with low-loss wavelength tunable mirror structures on Si3N4 PICs results in compact and robust tunable laser sources. These extended cavity diode lasers (ECDLs) exhibit unique characteristics like wide tuning ranges (>100 nm), ultra-narrow linewidths (<1 kHz) and high output powers. Here we present up to 162.5 mW of optical output power by combining two SOAs inside a single cavity, thereby scaling the output power without the need of additional optical amplification on the output port. The presented laser operates inside the telecom C-band, but the strategy can be tailored to other wavelengths like 850 nm, 780 nm and 690 nm, where Si3N4 plays a key role. This new generation of hybrid integrated ECDLs, exhibiting high optical output powers, wide wavelength tuning ranges and ultra narrow linewidths, opens up a wide range of applications.
Wavelength stabilization of external cavity lasers is a of key importance to exploit their sub-kHz intrinsic linewidth. In this work we demonstrate < 20 dB optical phase noise reduction at acoustic frequencies using a simple off-the-shelf electronic feedback loop. The novelty here is that we exploit an on-chip optical frequency discriminator (OFD) in Si3N4 (TriPleX), based on an aMZI with a path length difference of 1.4 m, having less than 10 dB loss. The used setup has a bandwidth of approximately 1 MHz, allowing for wavelength modulation depth in the order of tens of MHz.
We have developed a compact PIC external cavity laser consisting of a hybrid integrated InP gain section and SiN tunable mirror, with a superior combination of characteristics. The laser has shown a narrow linewidth < 5 kHz, broad tuning range of 140 nm over the S-, C- and L- band, from 1473 nm to 1612 nm, and high single mode output power of 60 mW. The laser frequency can be modulated at frequencies < 10 MHz having a wavelength modulation depth of < 20 MHz.
Semiconductor industry has an increasing demand for improvement of the total lithographic overlay performance. To
improve the level of on-product overlay control the number of alignment measurements increases. Since more mask
levels will be integrated, more alignment marks need to be printed when using direct-alignment (also called layer-to-layer
alignment). Accordingly, the alignment mark size needs to become smaller, to fit all marks into the scribelane. For
an in-direct alignment scheme, e.g. a scheme that aligns to another layer than the layer to which overlay is being
measured, the number of needed alignment marks can be reduced.
Simultaneously there is a requirement to reduce the size of alignment mark sub-segmentations without compromising the
alignment and overlay performance. Smaller features within alignment marks can prevent processing issues like erosion,
dishing and contamination. However, when the sub-segmentation size within an alignment mark becomes comparable to
the critical dimension, and thus smaller than the alignment-illuminating wavelength, polarization effects might start to
occur. Polarization effects are a challenge for optical alignment systems to maintain mark detectability. Nevertheless,
this paper shows how to actually utilize those effects in order to obtain enhanced alignment and overlay performance to
support future technology nodes.
Finally, another challenge to be met for new semiconductor product technologies is the ability to align through semi-opaque
materials, like for instance new hard-mask materials. Enhancement of alignment signal strength can be reached
by adapting to new alignment marks that generate a higher alignment signal. This paper provides a description of an
integral alignment solution that meets with these emerging customer application requirements. Complying with these
requirements will significantly enhance the flexibility in production strategies while maintaining or improving the
alignment and overlay performance. This paper describes the methodology for optimization of the alignment strategy.
KEYWORDS: Waveguides, Signal detection, Optical recording, Phase measurement, Near field optics, Spatial frequencies, Diffraction, Optical discs, Integrated optics, Near field
We present a study on application of optical waveguides as read-out units for optical recording. Simulations show that the system can resolve features well below the diffraction-limit.
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