A novel dual-dome micromechanical resonator and a method for fabricating it into a single or amorphous crystal silicon film layer is demonstrated. An electrostatic effect on the input resonator induces high-frequency resonant mechanical motion in the first dome plate, which is mechanically conducted into the second equivalent dome plate. Transduction from the input resonator to the output resonator is mechanically performed not by using coupling rods but by overlapping the plates. Oscillations are obtained at 8.5 MHz and 17 MHz when the resonator is buffered with a high-impedance junction gate field-effect transistor amplifier.
A new type of resonator structure has been developed in thin film SOI applications. The resonator has circular shape and vertical vibration. By using conventional SOI chips with other electronics it is possible to add this resonator in same structure without complex process steps. The resonator is low mass resonator. It can be used in low frequencies (MHz) and high frequencies (GHz). The resonator has two electrostatically driven electrodes, one directly in resonator and another in substrate. Coupling rods are not needed. Also it is possible to build some kind of transistor on the resonator. By using this component, the transistor can be driven electrostatically. It can have higher voltage-current amplification- ratio rather than conventional transistor because of mechanical impact. Both structures will at least have Q-value of 700, which has been measured in 3,3MHz in normal room conditions.