Reduced design rules demand higher sensitivity of inspection, and thus small defects which did not affect printability
before require repair now. The trend is expected to be similar in extreme ultraviolet lithography (EUVL) which is a
promising candidate for sub 32 nm node devices due to high printing resolution. The appropriate repair tool for the small
defects is a nanomachining system. An area which remains to be studied is the nano-machining system performance
regarding repair of the defects without causing multilayer damage. Currently, nanomachining Z-depth controllability is 3
nm while the Ru-capping layer is 2.5 nm thick in a Buffer-less Ru-capped EUV mask. For this report, new repair
processes are studied in conjunction with the machining behavior of the different EUVL mask layers. Repair applications
to achieve the Edge Placement(EP) and Z-depth controllability for an optimal printability process window are discussed.
Repair feasibility was determined using a EUV micro exposure tool (MET) and Actinic Imaging Tool (AIT) to evaluate
repairs the 30 nm and 40 nm nodes. Finally, we will report the process margin of the repair through Slitho-EUVTM
simulation by controlling side wall angle, Z-depth, and EP (Edge Placement) on the base of 3-dimensional experimental
Nano-machining repair tool plays an important role in the current 65 nm node photomask repair. It
removes defects mechanically with nanometer sized diamond tip with high accuracy and low damage using
high accuracy AFM data. The repair performance of nano-machining repair system largely depends on the
diamond tip whose aspect ratio decides the minimum reparable feature size. As the device shrinks to 45 nm
or 32 nm node, higher aspect ratio tip with weak structure is required. It is contradiction to the fact that
more accurate edge placement and better repair slope is required in smaller node repair, because deflection
or tip wear effect could happen in high aspect ratio tip. In this article, deflection and wear effect were
investigated in single layer repair recipe using SEM and AIMSTM. Multilayer recipe which complements
weak structure was estimated carefully, and some limits were discussed. Finally some requirements of
nano-machining repair system for 45 nm node were presented.
We prepared graphitic carbon nanotubes (Au-CPNTs) embedded with gold particles of 5-6 nm in diameter. First, poly(p-phenylenevinylene( (PPV) nanotubes containing Au particles were synthesized by chemical vapro deposition polymerization (CBDP) of α,α'-dichloro-p-xylene, which was carbonized at 850°C. Field emission properties of the Au-CPNTs were found to be excellent revealing a low turn-on electric field (2.1 V/μm) and a high amplification factor (11,500). In contrast, the values for virgin CPNTs were 3.1 V/μm and 4,910, respectively.