The phosphorescence polymer LEDs (PhPLEDs) with the structure of ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al
were fabricated and investigated on the electrical and optical properties at variations doping concentrations (0.5wt% to
2.5wt%) of Ir(ppy)3. PVK(poly-vinylcarbazole) and Ir(ppy)3[tris(2-phenylpyridine)iridium(III)] polymers were used as
the host and guest materials for the emission layer. TPBI was introduced to improve the light efficiency of the devices.
The maximum luminance and current density for PhPLED were about 8600 cd/m2 and 155 mA/cm2 at 7 V, when the
TPBI layer was introduced between emission and cathode electrode film. The emission spectrum and the CIE color
coordinator were about 512nm and x, y = 0.28, 0.63, respectively, showing green color.
We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single SiO2 layer works as an IR absorbing plate and Pb(Zr0.3Ti0.7)O3 thin film served as a thermally sensitive material. There are some advantages of applying SiO2 layer as an IR absorbing layer. First of all, the SiO2 has good IR absorbance within 8 ~ 12 μm spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. SiO2 layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness to the structure.