We propose a high performance ROIC for IR image sensor applications. Because a micro bolometer image sensor, used
in an IR image sensor, is made by a MEMS process, the resistance of bolometers by each process does not appear same
value under same IR energy incident condition. This resistance variation generates a different output signal for same
input by each chip. Instead of a single input mode, we used a differential input mode to the proposed ROIC and thus, a
new circuit structure that has high immunity to the process variations of micro bolometer was invented. This result is due
to the characteristics of the differential input mode that suppress the commonly appeared error and amplify the
differentially applied signal. Using results from a computer simulation, improvement such as that the effect of the
process error on the bolometer's resistance was decreased 10 ~ 12% without an additional compensation circuit was
found. Moreover we had analyzed the results by numerical methods and found that it is possible to control the gain and
compensation ability by design the capacitors of the integrator appropriately. A full chip including a ROIC and a micro
bolometer with 16 X 16 cell arrays was designed and implemented in standard 0.25um CMOS process.
As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage
or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC
is that resistances in the bolometer and replica resistor have process variation. This means that each pixel does not have
the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, differential input
stage readout architecture is suggested for bias offset reduction, noise immunity and high sensing margin. In addition,
using this scheme the effects of a process variation problem and various other bias heating noise problems, are reduced.
In this paper, a prototype ROICs, intended for uncooled microbolometer infrared focal plane array, is designed and
fabricated. The proposed architecture is demonstrated by fabrication of a prototype consisting of 32 x 32 pixels
fabricated in a 0.25-μm CMOS process.
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