Nitride based GaN and InGaN quantum dots are excellent single-photon emitters at high temperature owing to their wide bandgap and large exciton binding energy [1-5]. In this work, two different molecular beam epitaxy (MBE) grown nanostructures have been investigated for single-photon emission: InGaN/GaN disk-in-nanowire and InGaN/GaN self-organized quantum dot. Single-photon emission under both optical and electrical excitation has been observed from a single InGaN quantum contained in a GaN nanowire p-n junction. We demonstrate electrically driven single-photon emission, with a g (2)(0) = 0.35, from a single InGaN quantum dot emitting in the green spectral range (λ=520 nm) up to 125 K. Additionally, a self-organized InGaN/GaN single quantum dot diode was grown and fabricated. Emission from a single quantum dot (λ=620 nm) shows single-photon emission with g(2)(0) = 0.29 at room temperature. On-demand single-photon emission by electrical pumping of the quantum dot at an excitation repetition rate of 200 MHz was demonstrated.
A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by Jth = 1.76 kA/cm2 (green) and 2.94kA/cm2 (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz.