The laser diode was first developed in 1962, since which its design and some of the initial concepts have changed vastly.
Improvements in laser diode technology have assisted in the development of many modern day technologies, ranging
from remote sensing instruments to highly efficient pumping of other laser systems. As technologies where laser diodes
can be applied advance, it is important to understand the behaviour of the laser diode in such environments which may
become more hostile or complex.
This paper presents information and data from literatures published on previous investigations carried out on laser diodes
under the influence of neutron, gamma or X-ray irradiation. Any behavioural trends will be observed, as will any
abnormalities to provide a succinct review of the laser diodes in these environments, and allow for predictions or further
investigations into this subject to be made.