Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown on
p-type boron doped Si substrates by pulsed laser deposition (PLD). The effect of indium concentration on the structural,
optical and electrical properties of the film was studied. XRD, XPS and Raman studies confirm the single phase
formation and successful doping of In in to ZnO. We observed various photoluminescence emissions, ranging from UV
to visible, with the incorporation of In into ZnO. Room temperature Current-Voltage (I-V) characteristics showed good
p-n junction properties for n-type-undoped and In doped ZnO with p-type substrates. The turn on voltage was observed
to be decreasing with increase in In composition.