Mr. Satoshi Usui
at Toshiba Corp
SPIE Involvement:
Author
Publications (6)

PROCEEDINGS ARTICLE | March 15, 2016
Proc. SPIE. 9780, Optical Microlithography XXIX
KEYWORDS: Semiconductors, Lithography, Optical lithography, Lenses, Opacity, Etching, Metals, Scanners, Photoresist materials, Photomasks, Double patterning technology, Critical dimension metrology, Reactive ion etching, Semiconducting wafers, Anisotropic etching

SPIE Journal Paper | July 1, 2009
JM3 Vol. 8 Issue 03
KEYWORDS: Tolerancing, Lithography, Photomasks, Semiconducting wafers, Feature extraction, Optical proximity correction, Manufacturing, Scanning electron microscopy, Metals, Etching

PROCEEDINGS ARTICLE | March 19, 2008
Proc. SPIE. 6925, Design for Manufacturability through Design-Process Integration II
KEYWORDS: Lithography, Optical lithography, Metals, Inspection, Optical inspection, Wafer inspection, Photomasks, Optical proximity correction, Semiconducting wafers, CMOS devices

PROCEEDINGS ARTICLE | May 20, 2006
Proc. SPIE. 6283, Photomask and Next-Generation Lithography Mask Technology XIII
KEYWORDS: Semiconductors, Lithography, Optical lithography, Manufacturing, Inspection, Photomasks, Semiconductor manufacturing, Neodymium, Personal protective equipment, Process engineering

PROCEEDINGS ARTICLE | March 13, 2006
Proc. SPIE. 6156, Design and Process Integration for Microelectronic Manufacturing IV
KEYWORDS: Lithography, Etching, Metals, Manufacturing, Feature extraction, Scanning electron microscopy, Photomasks, Optical proximity correction, Semiconducting wafers, Tolerancing

PROCEEDINGS ARTICLE | June 29, 1998
Proc. SPIE. 3334, Optical Microlithography XI
KEYWORDS: Fabrication, Lithography, Distance measurement, Photomasks, Semiconductor manufacturing, Logic devices, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Personal protective equipment

Showing 5 of 6 publications
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