Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral
matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high
current density operation in kA/cm<sup>2</sup> order. The development of ambipolar light emitting transistor based on high
photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated
top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were
obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven
amplified spontaneous emission from organic materials.