Unwanted scattered light affects image-quality, OPC behavior and becomes increasingly problematic with decreasing wavelength. A software system has been written that incorporates a pattern-matching algorithm to locate regions in the mask geometry that closely resemble a problematic shape. Our goal is to improve manufacturing of a full-chip layout by identifying locations worst impacted by flare. The Pattern Matcher match factor shows good agreement in predicting flare sensitivity for several flare measurement layouts. The software is able to generate and process patterns capturing short-range, mid-range and long-range flare effects.
Immersion lithography is a viable method for continuing the reduction in critical dimension. Much of the improvement in image quality in immersion lithography centers around high-NA vector imaging effects and in particular the roles of the resist coupling and polarization properties. Electromagnetic scattering from local inhomogenities is considered yet emphasis is placed on the importance of accounting for high-NA, vector, immersion and resist standing wave effects. A new vector TCC formulation is introduced in SPLAT 6.0. The formulation is tested against a new theoretical formula for the Strehl ratio in air at high-NA and imaging 2D contact patterns at high NA in the resist stack.