Dr. Scott D. Hector Profile

Dr. Scott D. Hector

Mask Strategy Program Manager

SPIE Involvement:

Author

Publications (48)

Proceedings Article | 20 October 2006 Paper

Reparing the mask industry

Michael Lercel, Scott Hector

Proceedings Volume 6349, 634929 (2006) https://doi.org/10.1117/12.692826

KEYWORDS: Photomasks, Yield improvement, Semiconductors, Lithography, Phase shifts, Semiconducting wafers, Manufacturing, Defect inspection, Integrated circuits, Metrology

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Proceedings Article | 27 June 2006 Paper

Mask costs: a new look

Brian Grenon, Scott Hector

Proceedings Volume 6281, 628101 (2006) https://doi.org/10.1117/12.692622

KEYWORDS: Photomasks, Extreme ultraviolet, Binary data, Manufacturing, Mask making, Beam shaping, Semiconductors, Manufacturing equipment, Optical proximity correction, Yield improvement

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Proceedings Article | 21 June 2006 Paper

Mask industry assessment trend analysis

Gilbert Shelden, Scott Hector, Pat Marmillion, Michael Lercel

Proceedings Volume 6281, 628103 (2006) https://doi.org/10.1117/12.692628

KEYWORDS: Photomasks, Binary data, Manufacturing, Data processing, Optical proximity correction, Data conversion, Microelectronics, Printing, Pellicles, Semiconductors

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Proceedings Article | 8 November 2005 Paper

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

Scott Hector

Proceedings Volume 5992, 599228 (2005) https://doi.org/10.1117/12.637597

KEYWORDS: Photomasks, Extreme ultraviolet, Optical lithography, Instrument modeling, Inspection, Lithography, Mask making, Resolution enhancement technologies, Semiconductors, Defect inspection

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The extension of optical projection lithography through immersion to patterning features with half pitch ⩽65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

Proceedings Article | 4 November 2005 Paper

Mask industry assessment: 2005

Gilbert Shelden, Scott Hector

Proceedings Volume 5992, 599202 (2005) https://doi.org/10.1117/12.613333

KEYWORDS: Photomasks, Manufacturing, Binary data, Data processing, Microelectronics, Databases, Semiconductors, Semiconductor manufacturing, Glasses, Phase shifts

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Proceedings Article | 12 May 2005 Paper

Experimental measurements of diffraction for periodic patterns by 193-nm polarized radiation compared to rigorous EMF simulations

Marylyn Bennett, Andrew Grenville, Scott Hector, Shane Palmer, Leonardus Leunissen, Vicky Philipsen, Theodore Bloomstein, Dennis Hardy, Mordechai Rothschild, James Hilfiker

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600098

KEYWORDS: Photomasks, Diffraction, Sensors, Polarization, Binary data, Diffraction gratings, Phase shifts, Polarizers, Laser beam diagnostics, Attenuators

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Proceedings Article | 6 May 2005 Paper

Nanoimprint lithography: the path toward high-tech, low-cost devices

William Tong, Scott Hector, Gun-Young Jung, Wei Wu, James Ellenson, Kenneth Kramer, Timothy Hostetler, Susan Richards, R. Williams

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.607236

KEYWORDS: Photomasks, Nanoimprint lithography, Optical lithography, Inspection, Optical alignment, Extreme ultraviolet lithography, Nanotechnology, Electron beam lithography, Lithography, Semiconductor manufacturing

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Nanoimprint lithography is a contact-lithography technology invented in 1996 as a low-cost alternative to photolithography for researchers who need high resolution patterning. Initially perceived as a trailing-edge technology for low-cost device fabrication, it has been recently demonstrated to achieve sub-10 nm resolution and alignment, which equal or surpass even the most advanced photolithography today. At Hewlett-Packard, we have successfully used it to fabricate switchable molecular memory arrays with a dimension of 65 nm half pitch. Nanoimprint has been placed on the International Technology Roadmap for Semiconductors (ITRS) as a candidate for next-generation lithography (NGL) for insertion in the 32 nm node in Y2013. The switch from using light to using contact to pattern will indeed bring new challenges, the most important of which are alignment and the 1x mask/template. For alignment, one imprint tool maker has achieved alignment of +/-7 nm 3 sigma using Moire patterns. For template fabrication, the lack of OPC and other sub-resolution features produced large savings in patterning, but it is nearly cancelled out by the need for more aggressive inspection because of the smaller tolerable defect size. The two combined to make the predicted cost of nanoimprint template to be similar to photomasks for 45-nm half pitch. At 32-nm half pitch, EUVL masks do not have complicated sub-resolution features and are predicted to be cheaper than comparable nanoimprint templates provided that the former’s defect levels can be reduced to what is required for economical manufacturing. In both cases, the challenges are not insurmountable and solutions are being actively pursued. However, if nanoimprint is indeed the disruptive technology to photolithography, it needs to take its initial aim at the low-end market rather than mount a frontal challenge at semiconductor manufacturing, which is the high-margin customers that photolithography will pursue and protect at all cost. The recent development in nanotechnology will lead to the commercialization of a new class of nanoscale devices requiring a high-resolution lithographic technique that does not have all the functionalities of photolithography. This approach will provide an initial customer base for nanoimprint to develop and improve and position it to challenge photolithography in the distant future.

Proceedings Article | 6 December 2004 Paper

Can we afford to replace chrome?

Gilbert Shelden, Long He, Scott Hector, Walt Trybula

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.565124

KEYWORDS: Photomasks, Manufacturing, Etching, Extreme ultraviolet lithography, Reflectivity, Yield improvement, Inspection, Optical lithography, Semiconducting wafers, Chromium

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Chrome-based absorbers have been the mainstay of the photomask industry for three decades. While chrome is attractive because of its durability and opacity, it conversely poses challenges for etch and repair. Due to large capital investments, any new absorber must be designed to work with existing scanners, mask writers, and mask inspection tools. Furthermore changing absorber materials may not improve defect control in mask blank fabrication, which is a paramount concern in blank fabrication. Consequently, blank manufacturers are reluctant to change from chrome. In terms of return on investment (ROI), the only driver to switch technologies is achieving higher mask and wafer yields. This is a reasonable assumption as both etch and repair tool suppliers believe a non-chrome material like tantalum (Ta) compounds would significantly improve their capabilities with known technologies. A high level estimate shows that with even aggressive improvement assumptions, a 100% conversion from chrome does not save money. Based on the current International SEMATECH (ISMT) cost of ownership (COO) model and improved yields for critical dimension (CD) and defects, a case can be made for converting at and below 100 nm ground rules. An industry wide conversion from chrome to a non-chrome absorber is estimated to cost $100M. By contrast, blank suppliers are reportedly spending "multiple" millions of dollars to improve chrome per year. A widespread concern is whether binary optical masks have enough life left to provide sufficient ROI. Optical lithography will continue to be of use in the foreseeable future. Even as leading-edge production moves to new technology, the main manufacturing volumes will continue to create significant demand for masks for 100 nm to 45 nm for many years. With the industry currently pushing extreme ultraviolet lithography (EUVL), the best situation would be for EUVL and optical lithography to choose the same absorber material. This creates a winning situation for the industry independent of EUVL implementation timing. Today Ta-based films are a reasonable choice.

Proceedings Article | 6 December 2004 Paper

Defect printability and inspection of EUVL mask

Bing Lu, James Wasson, Pawitter Mangat, Jonathan Cobb, Scott Hector, Donald Pettibone, Donna O'Connell

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569318

KEYWORDS: Inspection, Photomasks, Defect inspection, Scanning electron microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, Defect detection, Reflectivity, Multilayers

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Proceedings Article | 6 December 2004 Paper

Mask industry assessment: 2004

Gilbert Shelden, Scott Hector

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.565034

KEYWORDS: Photomasks, Manufacturing, Data processing, Binary data, Microelectronics, Databases, Semiconductors, Pellicles, Glasses, Phase shifts

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Proceedings Article | 20 August 2004 Paper

EUVL mask challenges and how International SEMATECH is addressing them

Scott Hector, Kevin Kemp

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557813

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Multilayers, Reflectivity, Optical lithography, Defect inspection, Particles, Standards development

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Proceedings Article | 28 May 2004 Paper

Evaluation of the critical dimension control requirements in the ITRS using statistical simulation and error budgets

Scott Hector, Sergei Postnikov, Jonathan Cobb

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537107

KEYWORDS: Critical dimension metrology, Photomasks, Extreme ultraviolet, Error analysis, Monte Carlo methods, Semiconducting wafers, Lithography, SRAF, Statistical analysis, Extreme ultraviolet lithography

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Proceedings Article | 20 May 2004 Paper

Development of phase shift masks for extreme ultraviolet lithography and optical evaluation of phase shift materials

Sang-In Han, Eric Weisbrod, James Wasson, Rich Gregory, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher, Kristine Rosfjord

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535503

KEYWORDS: Reflectivity, Extreme ultraviolet, Etching, Phase shifts, Photomasks, Extreme ultraviolet lithography, Silicon, Scattering, Lithography, Chemical species

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Proceedings Article | 20 May 2004 Paper

Process latitude measurements and their implications for CD control in EUV lithography

Jonathan Cobb, Richard Peters, Sergei Postnikov, Scott Hector, Bing Lu, Eric Weisbrod, James Wasson, Pawitter Mangat, Donna O'Connell

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537366

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Optical proximity correction, Lithography, Photomasks, Critical dimension metrology, Data modeling, Monte Carlo methods, Scanners, Scanning electron microscopy

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Proceedings Article | 17 December 2003 Paper

METROPOLE-3D: a three-dimensional electromagnetic field simulator for EUV masks under oblique illumination

Zhengrong Zhu, Kevin Lucas, Jonathan Cobb, Scott Hector, Andrzej Strojwas

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518544

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Light scattering, Electromagnetism, Scattering, Reflectivity, Diffraction, Lithographic illumination, Electromagnetic scattering

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Proceedings Article | 16 June 2003 Paper

Design and method of fabricating phase-shift masks for extreme-ultraviolet lithography by partial etching into the EUV multilayer mirror

Sang-In Han, Eric Weisbrod, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484731

KEYWORDS: Reflectivity, Photomasks, Etching, Phase shifts, Tolerancing, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet, Signal attenuation, Chromium

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Proceedings Article | 16 June 2003 Paper

Rigorous EUV mask simulator using 2D and 3D waveguide methods

Zhengrong Zhu, Kevin Lucas, Jonathan Cobb, Scott Hector, Andrzej Strojwas

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484963

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Extreme ultraviolet lithography, Reflectivity, 3D modeling, Lithography, Computer simulations, Dielectrics, Diffraction

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Proceedings Article | 12 June 2003 Paper

Fabrication of integrated circuits with high yield using ultrathin resist processes

Richard Peters, Sergei Postnikov, Jonathan Cobb, S. Dakshina-Murthy, Tab Stephens, Colita Parker, Eric Luckowski, Arturo Martinez, Wei Wu, Scott Hector

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485122

KEYWORDS: Photoresist processing, Transistors, Etching, Semiconducting wafers, Plasma etching, Plasma, Silicon, Resistance, Defect inspection, Optical lithography

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Proceedings Article | 2 June 2003 Paper

Simulation of repairing thin-film phase defect in masks for EUV lithography

Yeong-Uk Ko, David Joy, Scott Hector, Bing Lu

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485014

KEYWORDS: Monte Carlo methods, Photomasks, Extreme ultraviolet lithography, Electrons, Electron beams, Thin films, Gaussian beams, Diffusion, Radiation effects, Extreme ultraviolet

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Proceedings Article | 24 July 2002 Paper

Integration of UTR processes into MPU IC manufacturing flows

Jonathan Cobb, S. Dakshina-Murthy, Colita Parker, Eric Luckowski, Arturo Martinez, Richard Peters, Wei Wu, Scott Hector

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474226

KEYWORDS: Etching, Line edge roughness, Photoresist processing, Semiconducting wafers, Scanning electron microscopy, Transistors, Optical lithography, Photoresist materials, Electron beam lithography, Image processing

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Proceedings Article | 1 July 2002 Paper

EUVL masks: requirements and potential solutions

Scott Hector

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472284

KEYWORDS: Photomasks, Multilayers, Extreme ultraviolet lithography, Coating, Inspection, Reflectivity, Extreme ultraviolet, Defect inspection, Electron beam lithography, Ion beams

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Proceedings Article | 1 July 2002 Paper

EUVL mask blank repair

Anton Barty, Paul Mirkarimi, Daniel Stearns, Donald Sweeney, Henry Chapman, W. Miles Clift, Scott Hector, Moonsuk Yi

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472313

KEYWORDS: Multilayers, Reflectivity, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Silicon, Ion beams, Molybdenum, Particles, Lithography

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Proceedings Article | 1 July 2002 Paper

Novel design of att-PSM structure for extreme-ultraviolet lithography and enhancement of image contrast during inspection

Sang-In Han, James Wasson, Pawitter Mangat, Jonathan Cobb, Kevin Lucas, Scott Hector

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472324

KEYWORDS: Phase shifts, Binary data, Chromium, Photomasks, Reflectivity, Inspection, Signal attenuation, Extreme ultraviolet, Extreme ultraviolet lithography, Multilayers

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Attenuated Phase Shift Masks (Att-PSM) have been actively investigated and developed for conventional optical lithography to enhance the lithographic performance. In this paper, Att-PSM for Extreme Ultraviolet Lithography (EUVL) is compared to binary EUVL masks through simulation. Additionally, a new structural design for EUVL Att-PSM that is intended to enhance the image contrast during the inspection is also presented. Aerial image simulation for 50 and 35-nm wide contact holes was performed using an internally developed optical projection lithography simulator. Analysis of phase shift and attenuation for various combinations of Att-PSM layers was also done using an internally developed simulator based on optical multilayer thin film theory. The results of aerial image simulation agree with previously published results in that Att-PSM for EUVL provide steeper edge profile and higher peak intensity compared to the binary EUVL mask. These enhanced aerial images provide greater exposure latitude and 28 percent to 80 percent greater depth of focus for Att-PSM compared to binary masks for printing contacts. The simulations were also used to set initial targets for phase and reflectance control of the PSM stack for 35-nm contacts. Mean reflectance between 3 and 6 percent and phase of 180 +/- 10 degrees result in significantly larger DOF than for binary masks. The prototype structure simulated for an EUVL Att-PSM consists of an upper dielectric layer (SiON) and a lower metal layer (TaN or Cr) on top of Mo/Si multilayer mirror. With this dual layer scheme, satisfying the optical requirements is easier than with a single layer structure because accurate control of phase shift and attenuation is possible by controlling the thickness of both the upper and lower layers. Obtaining the desired phase shift and transmission using a single layer is difficult. The advantage of having a dielectric (SiON) top layer is that the thickness of dielectric layer can be optimized to enhance the image contrast at inspection wavelength (normally DUV) as well as to provide the desired phase shift at exposure wavelength (13.4-13.5nm). Another advantage of Att-PSM for EUVL is the reduced height of patterned structure on the multilayer mirror which provides a relative advantage in resolution by reducing the image blur caused by the shadowing effects of the taller absorber stack.

Proceedings Article | 1 July 2002 Paper

Inspection of EUV reticles

Donald Pettibone, Andrei Veldman, Ted Liang, Alan Stivers, Pawitter Mangat, Bing Lu, Scott Hector, James Wasson, Kenneth Blaedel, Emily Fisch, David Walker

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472311

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Reflectivity, Silicon, Deep ultraviolet, Reticles, Semiconducting wafers, Multilayers, Glasses

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Proceedings Article | 1 July 2002 Paper

Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Kenneth Blaedel, John Taylor, Scott Hector, Pei-yang Yan, Arun Ramamoorthy, Peter Brooker

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472273

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Polishing, Optical spheres, Inspection, Manufacturing, Reflectivity, Surface finishing, Zerodur, Interferometers

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Proceedings Article | 11 March 2002 Paper

Multilayer coating requirements for extreme ultraviolet lithography masks

Scott Hector, Eric Gullikson, Paul Mirkarimi, Eberhard Spiller, Patrick Kearney, James Folta

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458369

KEYWORDS: Reflectivity, Multilayers, Photomasks, Coating, Mirrors, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Silicon, Lithographic illumination

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Proceedings Article | 2 November 2001 Paper

Thermal expansion and internal quality of a proposed EUVL mask substrate material: Zerodur

Mark Davis, Alexander Marker, Lutz Aschke, Fredi Schubert, Ewald Moersen, Heiko Kohlmann, Ina Mitra, Jochen Alkemper, Rudolf Mueller, John Taylor, Kenneth Blaedel, Scott Hector

Proceedings Volume 4452, (2001) https://doi.org/10.1117/12.446884

KEYWORDS: Zerodur, Extreme ultraviolet lithography, Temperature metrology, Refractive index, Photomasks, Glasses, Polishing, Error analysis, Projection systems, Interferometers

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Proceedings Article | 5 September 2001 Paper

EUVL masks: paving the path for commercialization

Pawitter Mangat, Scott Hector

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438382

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Multilayers, Optical lithography, Mask making, Reflectivity, Inspection, Electron beam lithography, Optics manufacturing

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Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Proceedings Article | 24 August 2001 Paper

Integration of ultrathin resist processes into MPU IC manufacturing flows

Jonathan Cobb, Will Conley, Todd Guenther, Fred Huang, Jen-Jiang Lee, Tom Lii, S. Dakshina-Murthy, Colita Parker, Saifi Usmani, Wei Wu, Scott Hector

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436856

KEYWORDS: Etching, Photoresist processing, Coating, Extreme ultraviolet lithography, Optical lithography, Semiconducting wafers, Manufacturing, Resistance, Metals, Cadmium

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Proceedings Article | 20 August 2001 Paper

Bremsstrahlung emission and absorption in electron projection lithography

Scott Hector, Jonathan Cobb, Vladimir Ivin, Mikhail Silakov, George Babushkin

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436640

KEYWORDS: Photons, Dielectrics, Monte Carlo methods, Absorption, Electron beam lithography, Projection lithography, Solids, Oxides, Chemical species, CMOS devices

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Proceedings Article | 20 August 2001 Paper

System integration and performance of the EUV engineering test stand

Daniel Tichenor, Avijit Ray-Chaudhuri, William Replogle, Richard Stulen, Glenn Kubiak, Paul Rockett, Leonard Klebanoff, Karen Jefferson, Alvin Leung, John Wronosky, Layton Hale, Henry Chapman, John Taylor, James Folta, Claude Montcalm, Regina Soufli, Eberhard Spiller, Kenneth Blaedel, Gary Sommargren, Donald Sweeney, Patrick Naulleau, Kenneth Goldberg, Eric Gullikson, Jeffrey Bokor, Phillip Batson, David Attwood, Keith Jackson, Scott Hector, Charles Gwyn, Pei-yang Yan

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436665

KEYWORDS: Extreme ultraviolet, Semiconducting wafers, Reticles, Projection systems, Sensors, Xenon, Mirrors, Optical alignment, Fiber optic illuminators, Multilayers

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Proceedings Article | 20 August 2001 Paper

Substrate defect smoothing of EUVL mask blanks using TaSiN films

James Wasson, Theresa Hopson, Pawitter Mangat, Scott Hector

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436701

KEYWORDS: Surface roughness, Annealing, Extreme ultraviolet lithography, Chromium, Photomasks, Mirrors, Reflectivity, Silicon, Semiconducting wafers, Extreme ultraviolet

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Proceedings Article | 20 August 2001 Paper

Infinitely selective repair buffer for EUVL reticles

James Wasson, Ken Smith, Pawitter Mangat, Scott Hector

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436667

KEYWORDS: Chromium, Etching, Carbon, Ions, Gallium, Extreme ultraviolet lithography, Reticles, Reflectivity, Inspection, Mirrors

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Proceedings Article | 22 January 2001 Paper

Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopy

James Wasson, Pawitter Mangat, Jon Slaughter, Scott Hector, Sasa Bajt, Patrick Kearney

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410748

KEYWORDS: Reflectivity, Mirrors, Etching, Beryllium, Extreme ultraviolet, X-rays, Chromium, Molybdenum, Optical lithography, Spectroscopy

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Proceedings Article | 22 January 2001 Paper

UV inspection of EUV and SCALPEL reticles

Donald Pettibone, Noah Bareket, Ted Liang, Alan Stivers, Scott Hector, Pawitter Mangat, Douglas Resnick, Michael Lercel, Mark Lawliss, Christopher Magg, Anthony Novembre, Reginald Farrow

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410699

KEYWORDS: Photomasks, Inspection, Charged-particle lithography, Extreme ultraviolet, Reticles, Reflectivity, Semiconducting wafers, Silicon, Ultraviolet radiation, Chromium

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Proceedings Article | 22 January 2001 Paper

Predictive model of the cost of extreme-ultraviolet lithography masks

Scott Hector, Patrick Kearney, Claude Montcalm, James Folta, Christopher Walton, William Tong, John Taylor, Pei-yang Yan, Charles Gwyn

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410754

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Multilayers, Inspection, Coating, Optical lithography, Lithography, Process modeling, Defect detection, Ion beams

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Proceedings Article | 21 July 2000 Paper

EUVL printing results of a low-thermal expansion material (LTEM) mask

William Tong, John Taylor, Scott Hector, Melissa Shell, Guojing Zhang, Patrick Kearney, Christopher Walton, Cindy Larson, James Wasson, Pawitter Mangat, Donna O'Connell, Daniel Folk

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390038

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Silicon, Manufacturing, Printing, Distortion, Lithography, Extreme ultraviolet, Reflectivity

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Proceedings Article | 21 July 2000 Paper

EUV mask fabrication with Cr absorber

Pawitter Mangat, Scott Hector, Stewart Rose, Gregory Cardinale, Edita Tejnil, Alan Stivers

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390099

KEYWORDS: Photomasks, Chromium, Etching, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Multilayers, Inspection, Deep ultraviolet, Silicon

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Proceedings Article | 21 July 2000 Paper

Extreme ultraviolet lithography: reflective mask technology

Christopher Walton, Patrick Kearney, Paul Mirkarimi, Joel Bowers, Charles Cerjan, Abbie Warrick, Karl Wilhelmsen, Eric Fought, Craig Moore, Cindy Larson, Sherry Baker, Scott Burkhart, Scott Hector

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390088

KEYWORDS: Coating, Photomasks, Extreme ultraviolet lithography, Multilayers, Semiconducting wafers, Silicon, Gold, Optical spheres, Reflectivity, Defect detection

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EUVL mask blanks consist of a distributed Bragg reflector made of 6.7 nm-pitch bi-layers of Mo and Si deposited upon a precision Si or glass substrate. The layer deposition process has been optimized for low defects, by application of a vendor-supplied but highly modified ion-beam sputter deposition system. This system is fully automated using SMIF technology to obtain the lowest possible environmental- and handling-added defect levels. Originally designed to coat 150 mm substrates, it was upgraded in July 1999 to 200 mm and has coated runs of over 50 substrates at a time with median added defects > 100 nm below 0.05/cm². These improvements have resulted from a number of ion-beam sputter deposition system modifications, upgrades, and operational changes, which will be discussed. Success in defect reduction is highly dependent upon defect detection, characterization, and cross- platform positional registration. We have made significant progress in adapting and extending commercial tools to this purpose, and have identified the surface scanner detection limits for different defect classes, and the signatures of false counts and non-printable scattering anomalies on the mask blank. We will present key results and how they have helped reduce added defects. The physics of defect reduction and mitigation is being investigated by a program on multilayer growth over deliberately placed perturbations (defects) of varying size. This program includes modeling of multilayer growth and modeling of defect printability. We developed a technique for depositing uniformly sized gold spheres on EUVL substrates, and have studied the suppression of the perturbations during multilayer growth under varying conditions. This work is key to determining the lower limit of critical defect size for EUV Lithography. We present key aspects of this work. We will summarize progress in all aspects of EUVL mask blank development, and present detailed results on defect reduction and mask blank performance at EUV wavelengths.

Proceedings Article | 21 July 2000 Paper

EUV mask fabrication using Be-based multilayer mirrors

Pawitter Mangat, James Wasson, Scott Hector, Gregory Cardinale, Sasa Bajt

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390123

KEYWORDS: Photomasks, Reflectivity, Multilayers, Extreme ultraviolet, Extreme ultraviolet lithography, Beryllium, Mirrors, Lithography, Optical lithography, Mask making

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Proceedings Article | 30 December 1999 Paper

Comparison of at-wavelenth inspection, printability, and simulation of nanometer-scale substrate defects in extreme ultraviolet lithography (EUVL)

Gregory Cardinale, John Goldsmith, Avijit Ray-Chaudhuri, Aaron Fisher, Scott Hector, Pawitter Mangat, Zorian Masnyj, David Mancini, Bill Wilkinson, Jeffrey Bokor, Seongtae Jeong, Scott Burkhart, Charles Cerjan, Christopher Walton, Cindy Larson, Pei-yang Yan, Guojing Zhang

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373339

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers, Inspection, Chromium, Scanning electron microscopy, Reticles, Silicon films, Printing

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Proceedings Article | 30 December 1999 Paper

Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)

William Tong, John Taylor, Scott Hector, Melissa Shell

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373338

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Silicon, Surface finishing, Distortion, Extreme ultraviolet, Chemical mechanical planarization, Printing, Atomic force microscopy

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Proceedings Article | 25 June 1999 Paper

Thermal management of EUV lithography masks using low-expansion glass substrates

Steven Gianoulakis, Avijit Ray-Chaudhuri, Scott Hector

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351133

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Silicon, Extreme ultraviolet lithography, Lithography, Glasses, Multilayers, Extreme ultraviolet, Distortion

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Proceedings Article | 23 April 1999 Paper

Mask technology for EUV lithography

M. Bujak, Scott Burkhart, Charles Cerjan, Patrick Kearney, Craig Moore, Shon Prisbrey, Donald Sweeney, William Tong, Stephen Vernon, Christopher Walton, Abbie Warrick, Frank Weber, Marco Wedowski, Karl Wilhelmsen, Jeffrey Bokor, Sungho Jeong, Gregory Cardinale, Avijit Ray-Chaudhuri, Alan Stivers, Edita Tejnil, Pei-yang Yan, Scott Hector, Khanh Nguyen

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346225

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Multilayers, Reflectivity, Extreme ultraviolet, Silicon, Inspection, Optical lithography, Ion beams

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Proceedings Article | 18 December 1998 Paper

Masks for extreme ultraviolet lithography

Stephen Vernon, Patrick Kearney, William Tong, Shon Prisbrey, Cindy Larson, Craig Moore, Frank Weber, Gregory Cardinale, Pei-yang Yan, Scott Hector

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332826

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Multilayers, Semiconducting wafers, Reflectivity, Silicon, Extreme ultraviolet, Inspection, Optical lithography, Ion beams

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Proceedings Article | 7 July 1997 Paper

Simulation of x-ray mask defect printability

Srinivas Bollepalli, Scott Hector, Juan Maldonado, Jeffrey Leavey, Franco Cerrina, Mumit Khan

Proceedings Volume 3048, (1997) https://doi.org/10.1117/12.275772

KEYWORDS: Photomasks, X-rays, Pellicles, Optical spheres, Software development, Polymethylmethacrylate, Diffraction, Mask making, Absorbance, Signal attenuation

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Proceedings Article | 19 May 1995 Paper

Electrical linewidth measurements and simulations studying the effect of dose and gap on exposure latitude in x-ray lithography

Christine Nelson, Scott Hector, William Chu, Philip Seese, Matthew Thompson, Victor Pol, Mark McCord, James Oberschmidt, James Taylor

Proceedings Volume 2437, (1995) https://doi.org/10.1117/12.209161

KEYWORDS: Etching, Scanning electron microscopy, Semiconducting wafers, X-ray lithography, Photomasks, Resistance, Metrology, Lithography, Synchrotrons, Reactive ion etching

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Proceedings Article | 1 December 1991 Paper

Shared aperture for two beams of different wavelength using the Talbot effect

Scott Hector, Gary Swanson

Proceedings Volume 1555, (1991) https://doi.org/10.1117/12.50635

KEYWORDS: Phase shift keying, Reflectivity, Computing systems, Binary data, Holography, Phase modulation, Optical components, Modulation, Diffraction gratings, Wavefronts

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