Polydimethylglutarimide PMGI-based resists are finding increasing
use in microelectromechanical systems MEMS as both sacrificial
and structural materials. PMGI-based resists are commercially
available and were originally designed for use in bilayer lift-off applications.
Literature on deep-UV exposure and development of PMGI films is
limited to films less than 2.5 m in thickness, and use only tetramethylammonium
hydroxide TMAH-based developers. We investigate the
exposure and development of PMGI films greater than 6 m in thickness
using the two main classes of developer for PMGI, TMAH, and tetraethylammonium
hydroxide TEAH-based developers. At these thicknesses,
a nonuniform dose through the film due to the optical absorption of the
PMGI leads to large gradients in the dissolution properties. We report
etch rates as a function of surface dose and development time. Additionally
a model is developed to provide a basic predictor of development
depth and other important data for fabrication process planning and
development.
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