One of technical issues of directed self-assembly lithography is extremely narrow patterning range. It is really difficult to make not only smaller patterns (pitch of less than 30nm) because of self-assembling limit but also middle patterns (pitch of more than 60nm) because of material synthesis issues. This paper describes wide–range directed self-assembly lithography which enables not only narrow patterns but also wide patterns using newly developed block copolymer. One block of the new block copolymer is easily metalized selectively by metalize technology and it is confirmed that dry etching resistance is markedly improved.
In next generation lithography to make sub-15nm pattern, Directed self-assembly (DSA) and Nano-imprint lithography (NIL) are proposed. The current DSA process is complicated and it is difficult to decrease width and line edge roughness of a guide pattern for sub-15nm patterning. In the case of NIL, it is difficult to make the master template having sub- 15nm pattern. This paper describes cost-effective lithography process for making sub-15nm pattern using DSA on a guide pattern replicated by Nano-imprinting (NIL + DSA). Simple process for making sub-15nm pattern is proposed. The quartz templates are made and line/space patterns of half pitch (hp) 12nm and hp9.5nm are obtained by NIL + DSA.
For sub-10nm lithography for semiconductor devices, inspection technologies for detecting nanometer size defects become quite important. In the case of optical inspection, it is difficult to detect a defect whose size is less than 23nm because of optical resolution limit. This paper describes a cost-effective inspection technology for detecting a nanometer size defect with the optical inspection technology using replicated soft template which is able to enlarge a defect size by expanding. Feasibility of detecting 9.6nm defect with optical inspection is reported.
For making sub-10nm patterns, new lithography technology is proposed in this paper. This is a cost-effective new lithography process using the special organic material which is able to reduce a pattern size by shrinking. Shrinking ratio of various methods, decreasing line edge roughness (LER) and patterning of less than 10nm half pitch size are reported.