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PSCAR utilizes an area-selective photosensitization mechanism to generate more acid in the exposed areas during a UV exposure. PSCAR is an attempt to break the resolution, line-edge-roughness, and sensitivity trade-off (RLS trade-off) relationships that limit standard chemically amplified resists. The photosensitizer, which is generated in exposed area by a photoacid catalytic reaction, absorbs the UV exposure light selectively and generates additional acid in the exposed area only.
Material development and UV exposure uniformity are the key elements of PSCAR technology for semiconductor mass fabrication. This paper will review the approaches toward improvement of PSCAR resist process robustness. The chemistry’s EUV exposure cycle of learning results from experiments at imec will be discussed.
PSCAR is a modified CAR which contains a photosensitizer precursor (PP) in addition to other standard CAR components such as a protected polymer, a photo acid generator (PAG) and a quencher. In the PSCAR process, an improved chemical gradient can be realized by dual acid quenching steps with the help of increased quencher concentration. The addition of the PP, as well as other material optimization, offers more degrees of freedom for getting high sensitivity and low LER, but also makes the system more complicated. Thus coupling simulation and experimentation is the most rational approach to optimizing the overall process and for understanding complicated 2-D structures.
In this paper, we will provide additional background into the simulation of PSCAR chemistry, explore the effects of PSCAR chemistry on chemical contrast of complex structures (e.g. T structures, slot contacts, I/D bias for L/S), and explore the sensitivity enhancement levels capable while improving or maintaining lithographic performance. Finally, we will explore modifications of PSCAR chemistry on performance.
Tokyo Electron Limited has focused its efforts in scaling many laboratory demonstrations to 300 mm wafers. Additionally, we have recognized that the use of DSA requires specific design considerations to create robust layouts. To this end, we have discussed the development of a DSA ecosystem that will make DSA a viable technology for our industry, and we have partnered with numerous companies to aid in the development of the ecosystem. This presentation will focus on our continuing role in developing the equipment required for DSA implementation specifically discussing defectivity reduction on flows for making line-space and hole patterns, etch transfer of DSA patterns into substrates of interest, and integration of DSA processes into larger patterning schemes.
Importance of resist transparency and development rate control in via-first dual damascene processes
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