A 1550 nm polarization-insensitive superluminescent diode (SLED) has been demonstrated with >100 mW continuous wave (CW) output power. More than 40 nm FWHM bandwidth of a Gaussian-shape spectrum, and less than 0.7 dB peak-to-peak ripple were also achieved with a polarization dependence of the output power spectrum that is less than 1 dB over 1530-1610 nm.
A 1310nm superluminescent diode (SLED) has been demonstrated with > 80mW continuous wave (CW) output power at 25 0C with a spectral bandwidth of > 60nm and peak-to-peak modulation of < 0.6dB. Low power ( ~ 4 mW), ultrawide bandwidth ( ~ 95nm) SLED can also be realized using the same structure but shorter cavity length.
In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs<SUB>1-x</SUB>Sb<SUB>x</SUB>/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10<SUP>3</SUP> V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10<SUP>-2</SUP> V/W at 8 micrometers . The R<SUB>o</SUB>A product of InAsSb detectors has been theoretically and experimentally analyzed.