In recent years, aluminum oxide films have found application in surface acoustic wave sensors. The paper presents the mechanical and physical properties of aluminum oxide (Al2O3) films obtained by the sol-gel method and subsequent sintering by high-temperature annealing. The synthesis of an aluminum oxide film from inorganic sols using the sol-gel technology was carried out. The effect of high-temperature treatment on the geometric dimensions, surface morphology, and hardness of Al2O3 films has been investigated. It was found that due to high-temperature sintering, the average values of film thickness and surface roughness are reduced by about 2 times. The effect of sintering temperatures on hardness suggests that with increasing temperature hardness of aluminum oxide film increases, and at sintering temperature of 800°C was 11.7±1.2 GPa.
A sol-gel synthesis of alumina-based films and followed single crystal formation by thermal fields in vacuum are investigated that can be applied as gate dielectrics for organic field-effect transistors. The results showed that the values of roughness and thickness of the sol-gel Al2O3 film decreased by almost 2 times with increasing temperature annealing in vacuum. It is established that the dielectric constant of sol-gel films decreasing from 9.1 to 7.3 through vacuum annealing at 1000°C acquiring typical value of crystalline sapphire.
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