Dr. Sergey V. Ovsyannikov Profile

Dr. Sergey V. Ovsyannikov

at Univ Bayreuth

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 9 March 2013 Paper

Thermopower of phases and states of Si under high pressure

V. Shchennikov, Vs. Shchennikov, S. Streltsov, I. Korobeynikov, N. Morozova, S. Ovsyannikov

Proceedings Volume 8612, 86120K (2013) https://doi.org/10.1117/12.2007724

KEYWORDS: Silicon, Thermoelectric materials, Metals, Semiconductors, Crystals, Diamond, Metalloids, Solid state electronics, Doping, X-rays

Read Abstract +

Proceedings Article | 28 April 2011 Paper

Electrical and mechanical properties of multi-phase systems under external impacts

S. Ovsyannikov, V. Shchennikov, I. Komarovskii, G. Vorontsov, I. Korobeynikov

Proceedings Volume 7978, 79781W (2011) https://doi.org/10.1117/12.881913

KEYWORDS: Systems modeling, Magnetism, Thermoelectric materials, Thermal modeling, Crystals, Composites, Spherical lenses, Mathematical modeling, Instrument modeling, Thermal effects

Read Abstract +

Proceedings Article | 30 December 2003 Paper

Electronic properties of multiphase systems with varying configuration of inclusions

Vladimir Shchennikov, Sergey Ovsyannikov, Grigoriy Vorontsov, Vsevolod Shchennikov

Proceedings Volume 5342, (2003) https://doi.org/10.1117/12.523542

KEYWORDS: Thermoelectric materials, Composites, Optical spheres, Systems modeling, Semiconductors, Magnetism, Heterojunctions, Spherical lenses, Basic research, Diamond

Read Abstract +

Proceedings Article | 24 April 2003 Paper

Measurement of thermoelectric, galvanomagnetic, and thermomagnetic effects on microsamples at ultrahigh pressure

Sergey Ovsyannikov, Vladimir Shchennikov

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.498536

KEYWORDS: Thermoelectric materials, Semiconductors, Scattering, Magnetism, Diamond, Lead, Group IV-VI semiconductors, Selenium, Crystals, Tungsten

Read Abstract +

Proceedings Article | 1 April 2003 Paper

Measurement of thermoelectric, galvanomagnetic, and thermomagnetic effects at ultrahigh pressure

Sergey Ovsyannikov, Vladimir Shchennikov

Proceedings Volume 5073, (2003) https://doi.org/10.1117/12.486012

KEYWORDS: Semiconductors, Thermoelectric materials, Scattering, Lead, Magnetism, Diamond, Selenium, Tellurium, Chalcogenides, Group IV-VI semiconductors

Read Abstract +

Lead chalcogenides are successfully applied at sensors of infrared radiation, thermoelectrical devices, thermogenerator, photoresistances, photodiodes, lasers, tensometers etc. Under high pressures above 2.5 - 6 GPa lead chaclogenides are known to suffer phase transitions, but up to now the thermoelectric properties of these materials at high pressure were unknown. In recent papers it was shown that heterophase state of material, which is being forming in the vicinity of semiconductor-metal phase transformations may be considered as a model of layer fabricated systems. As the most properties being dependent on the concentration and configuration of phases inclusions these materials may be used in engineering. For example, semiconductor-metal phase transitions induced by nanosecond heating and cooling of small regions of the memory cell are known to be using for nonvolatile memory develop. Recently the new technique of thermomagnetic measurements allowing to test a micro-samples of semiconductors have been developed at high pressure up to 30 GPa. The technique was applied for determination of scattering mechanisms and mobilities of charge carriers of direct-gap semiconductors Te, Se at ultrahigh pressure up to 30 GPa. The above measurements seems to be perspective for implementation to microelectronic manufacturing and MEMS technologies, for example, in modeling, quality control or testing of integrated circuit (IC). In present paper the thermo- and galvanomagnetic properties of micro-samples ~ 200×200×20 mkm of lead chalcogenides (PbS, PbSe, PbTe) at high pressure are investigated. The data of transverse magnetoresistance (MR) and also transverse and longitudinal Nernst-Ettingshausen (N-E) effects of lead chalcogenides both for initial and new phases, and also for heterophase states in the vicinity of phase transformations at high pressure are presented. One may suppose that the effects observed will find an interesting applications in thermosense industry. The work is supported by the Russian Foundation for Basic Research, Gr. No. 01-02-17203.