GaAs-based heterostructures containing the layers with InAs quantum dots were studied by high-resolution X-ray diffraction and reflectivity measurements. Their structural parameters were derived by theoretical analysis of the measured data. The parameters derived from the diffraction and reflectivity measurements agree well with one another, which indicates that structural data yielded by the combination of such measurements can well be deemed plausible.
We analyze the possibility for simultaneous adequate treatment of angular dependencies of the X-ray diffraction reflectivity and photoelectron yield (X-ray standing waves method) in order to extract the structural characteristics of semiconducting materials with ultra fine inclusions. Facilities of such an approach for evaluation of the degree of structural perfection of the layers, the phase shift of upper layers with respect to the buffer, the lattice parameters of particular layers and interfaces between them are demonstrated within the analysis of heterostructures based on the Si matrix with the Si1-xGex quantum wells and on the GaAs matrix with the InAs quantum dots.