Photonic quasi-crystal structures have been prepared and investigated. Symmetrical patterns were fabricated by
interference lithography in negative tone photoresist and transferred to silicon by reactive ion etching. Theoretical
influences of pattern detail (radius of hole) on the photonic band gap have been studied. Three types of 2D photonic
quasi-crystals have been prepared: 8-fold, 10-fold and 12-fold pattern. Finally, finite-difference time-domain method was
used for theoretically prediction of transmission spectrum for fabricated 12-fold quasi-crystal.
Using Finite-difference time-domain (FDTD) method, the excitation of surface plasmon polaritons (SPP) at the
sinusoidally corrugated metal-dielectric interface was simulated. The sample structure was made by creating onedimension
sinusoidally corrugated dielectric layer on top of metal thin film deposited on dielectric substrate. The
thickness of metal film was simulated in range from 10 to 200 nm. Sinusoidally corrugated grating was modelled with
different pitch and height. Additionally influence of a dielectric layer between grating and metal layer was simulated.
The optical response of the structure was obtained in the regime of wavelength and angle. All simulations were
performed for gold (Au) thin films deposited on glass substrate. Then selected structures were fabricated and measured.
The gold film was thermally evaporated on glass substrate then the one-dimension sinusoidally corrugated dielectric
layer was made in a photoresist using interference lithography.
A wavelength selective add-drop multiplexer utilizing a directional coupler loaded with a first order Bragg grating can be
realized both in fiber and planar technologies. Specifically for the planar case, we detail a systematic design procedure
leading from general assumptions concerning the functional parameters of the device down to geometrical dimensions of
the resulting planar microstructure. The functional parameters include: channel spectral width and channel isolation. The
resulting dimensions are: waveguides etch depth, grating etch depth and lengths of apodized-grating trenches. Grating
apodization profile of the form sin^n is assumed. Design curves are presented, enabling an optimal choice of the
apodization profile's exponent n considering a tradeoff between the required channel isolation and the resulting grating
length.
We present results of numerical modeling of photonic crystal (PhC) structures fabricated in gallium nitride (GaN). GaN
is a wide band gap semiconductor material with large refractive index and very good thermal and mechanical properties,
so it is considered a valuable candidate for photonic crystal application - in particular for devices exposed to the harsh
environment. In this paper are considered the ideal 2D PhC with infinite high for a different lattice structures and
calculated optical band gap maps for each. We also calculated air-bridge type slab and "sandwich-type" PhC slabs with
finite height. The dependence of transmission and reflection spectra on holes size, width and profile of "sandwich-type"
PhC slab structure are investigated. All calculations were performed using plane wave expansion method (PWE) and
finite difference time domain method (FDTD).
Gallium nitride is an important material for the contemporary optoelectronics. Large electric band gap, high temperature
resistivity and environmental resistance make GaN interesting also for sensor applications. However, asymmetric
structure of GaN-on-sapphire slab waveguide, grown as a conventional epitaxial heterostructure, poses a problem with
achieving high quality (Q) factor resonators. In this paper, issues related to an asymmetric structure of a waveguide and
theoretical possibilities to achieve high Q-factor resonator in the GaN planar structures are discussed. Three dimensional
(3-D) finite-difference time-domain (FDTD) modeling tools were used. It is shown that the highest Q-factor value of
~ 23 000 is obtained for a symmetrical membrane in L9 (nine points-defect cavity) micro-cavity based on GaN planar
waveguide. In reference to the simulation results, we also discuss the technological issues, i.e. fabrication of photonic
crystal patterns in GaN layers. New approach presented here included deep RIE etching with use of only single masking
layer and conductive polymer usage in e-beam pattering. Possible applications of the micro-resonators for sensor
applications are discussed.
Results of the Discrete Layer Peeling (DLP) inverse scattering algorithm do not directly correspond to Bragg grating's
technological parameters. We propose a method of transforming a stack of discrete complex reflectors resulting from
DLP into physical and geometrical parameters of a Bragg grating suitable for fabrication in planar technology.
Particularly, the method keeps lengths of grating sections (teeth and grooves) above a required technological minimum.
While the stack of complex reflectors is a natural output DLP, it can also be computed from a space distribution of the
complex coupling coefficient determined in other ways.
Depth and profile information of one or two-dimensional photonic crystals can be obtained through
measurements of reflective diffractive patters obtained from the structures and subsequent numerical analysis. The
technique is known as a scatterometry. The method is non-invasive and fast, and competitive to the alternatives of AFM,
SEM etc. In our paper we presented results of investigation 1D photonic crystal fabricated in GaN with period
Λ = 400 nm, fill factor ff = 50% and depth d = 400 nm. Using computer algorithm of Rigorous Coupled Wave Analysis
(RCWA) and measuring diffracted light we extracted the profile parameters of Λ = 420 nm, ff = 51%, d = 400 nm.
Possibility of application of our method for analysis 2D photonic crystals is discussed also.
Two-dimensional (planar) photonic crystal waveguides give a possibility to propagate a light beam at narrow angles with small or no energy losses. Line and point defects introduced into the lattice modify the photonic structure of the crystal, which further leads to the possibility of designing more advanced integrated optical structures, such as strip waveguides, splitters or emitters. In our research we adopted Electron Beam Induced Deposition technique to produce the point and the line defects in a photolithographic pattern of a photonic crystal. First, we produced a pattern of holes in a positive photoresist film by two-beam interference lithography1. Then we utilised EBID technique to fill the selected holes, by adopting SEM Hitachi S 570 device. As a process precursor we used diluted vapour of trimethylpentaphenyltrisiloxane, which is the dominant constituent of diffusion pump oil2.
Focused electron beam locally decomposes precursor molecules, which leads to solid material deposition. Composition of deposited structure is a mixture of amorphous carbon and some polymers. By the beam scanning in a line mode, the line of carbon can be deposited. Such a line defect in photoresist can act as a protecting mask during the further etching process. This controllable and high-resolution method can be used to fabricate W1, W2 and W3 types of channel waveguides. The best EBID resolution obtained in the selected setup gives lines with width of 15-25 nm.
Efficient optical modulators and switches are the key elements of the future all-optical fiber networks. Aside from numerous advantages, the integrated optical devices suffer from excessive longitudinal dimensions. The dimensions may be significantly reduced with help of periodic structures, such as Bragg gratings, arrayed waveguides or multilayer structures. In this paper we describe methods of analysis and example of analytical results of a photonic switch with properties modified by the application of periodic change of effective refractive index. The switch is composed of a strip-waveguide directional coupler and a transversal Bragg grating.
The use of the holographic lithography method for sub-nano pattering of photoresist layer deposited on bare sapphire substrate as well as on GaN grown by metaloorganic vapour phase epitaxy on Al2O3 is reported. Positive photoresist Shipley SPR700 was first diluted with photoresist thinner and then spin-coated on prepared substrates to obtain layers of final thickness of 227nm. Thin photoresist layer was exposed in the holographic setup with wavelength of 355nm to produce the surface relief grating. After development SEM observations reveled well-defined valleys and ridges of diffraction grating in SPR700 deposited on gallium nitride layer whereas the whole structure on sapphire was strongly affected by the speckles created by reflection from the unpolished back surface of the sapphire substrate. Latter, we confirmed with transmission spectroscopy, that even small amount of light transmitted through the substrate, which is back reflected by the unpolished back-surface of sapphire, canstrongly disturb nano-sized features in photoresist.
Application of photonic crystals in the future photonic integrated circuits (PICs) is one of the most interesting issues in modern photonics. With the photonic-crystal-based PICs it will be possible, at last, to realize compact in size, multicomponent optical integrated circuits. Nanostructured materials with ordered arrays of holes or rods are practical realization of photonic band-gap concept. In this paper we present a fabrication method for periodic arrays with openings of arbitrary shape and size. The method is based on exposition of thin photoresist film with two interfering laser beams 3rd harmonics of Nd-YAG laser source and positive photoresist has been used. Two examples of periodic structures are described here: obtained with 75° and 90° substrate rotation. In both cases the starting structure was one-dimensional diffraction grating with period of 1.26 μm. Two different patterns has been obtained in photoresist as a result of the test exposures. In one case nearly circular openings with diameter of 780 nm has been obtained. Periodicity of the resulting array, grid pattern, shape and size of the openings can be varied by adjustment of exposure parameters which can lead to fabrication of two-dimensional photonic crystal.
Problem of efficient light coupling into planar waveguide structures was always a stumbling block for the designers of integrated optical circuits. In this article methods of light coupling into the planar waveguides are described. Comparison of two main approaches -- prism and grating coupling -- is given. Examples of grating coupler technology are presented also.
In this paper new designs of modern optoelectronics devices based on GaN-type materials are presented. First, fundamental properties of gallium nitrides are presented, with special attention paid to its optical characteristics. Then examples of devices fabricated at Wroclaw University of Technology are shown, namely MSM detectors based on AlGaN. A short literature overview of devices based on gallium nitride compounds is also given. Presented applications include DFB lasers, structure, LED, optical waveguides, photonic crystals and light modulators made of GaN compounds.
In modern telecommunication systems data are transmitted over long distances at high transmission rates. Such systems require high-speed, all-optical 3R regeneration (reamplifying, reshaping, retiming) of transmitting signal. In this article are reviewed telecommunication systems in aspects of 3R regeneration. In common use are classical systems that amplify light with Erbium Doped or Raman fibers and reshape/retime signal in electronic way. Novel all optical 3R regeneration systems without optics-electronics conversion are also described.
In presented work, analysis, classification, and selected methods of solving problems connected with coupling optical fibers to integrated optic structures has been shown. The construction and technology of PIN and MSM type detectors and Mach-Zehnder modulator has been described. Several variants of package constructions have been proposed for optical fibers to optoelectronic devices coupling.
Semiconductor light sources and detectors keep the major share of the telecommunication and local area network market. Diode laser and detector structures are also massively produced in the course of many application and research projects. Usually research work includes: understanding physical phenomena governing device performance, device modeling and fabrication. A number of steps however, have to be completed before one can use the device in a real-life system or sell it. To exemplify details of fiber optic detectors and transmitters fabrication, a didactic-purpose fabrication line has been assembled. The following paper presents results of a project aimed at producing some fiber optic telecommunication devices during students laboratory work.
Modulator structures fabricated in GaAs/AlGaAs multilayer system offer the advantages of optoelectronic circuits integration and backup of well developed epitaxial layers technology. Fabry-Perot (F-P) waveguide-type modulators have been analyzed and fabricated in MOCVD produced GaAs/AlGaAs structures. Test structures have been developed to obtain the values of material and technological parameters necessary for exact modelling and successful technology development. Theoretical model of F-P modulator has been developed. The output intensity dependencies of F-P modulator on different input parameters are plotted and then obtained characteristics are considered in terms of fabrication technology and modulator applications. With measured electrical parameters, equivalent circuits of electrode structure has been built. The model has been used to analyze the frequency response of the device in the range from DC to RF. Finally, system approach is developed towards the processes of research and fabrication of Fabry-Perot type electro-optic modulator.
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