Dr. Seung-Wook Park Profile

Dr. Seung-Wook Park

Director at Hanyang Univ

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Author

Publications (18)

Proceedings Article | 1 April 2009 Paper

Temperature and critical dimension variation in a single wafer on hot plate due to non-uniform heat source

Bobae Kim, Joon-Min Park, Hyunsu Kim, Ilsin An, Seung-Wook Park, Hye-Keun Oh

Proceedings Volume 7273, 72732Z (2009) https://doi.org/10.1117/12.814009

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Photoresist materials, Process control, Lithography, Semiconductors, Etching, Photoresist processing, Chemically amplified resists, Polymers

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Proceedings Article | 1 November 2007 Paper

Critical dimension control for 32 nm random contact hole array with resist reflow process

Joon-Min Park, Young-Min Kang, Seung-Wook Park, Joo-Yoo Hong, Hye-Keun Oh

Proceedings Volume 6730, 673043 (2007) https://doi.org/10.1117/12.746518

KEYWORDS: Optical proximity correction, Photomasks, Critical dimension metrology, Photoresist processing, Optical lithography, Cadmium, Lithography, Optical arrays, Process control, Control systems

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Proceedings Article | 1 November 2007 Paper

Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask

Young-Min Kang, Seung-Wook Park, Hye-Keun Oh

Proceedings Volume 6730, 673042 (2007) https://doi.org/10.1117/12.746510

KEYWORDS: Diffusion, Photomasks, Phase shifts, Critical dimension metrology, Lithography, Chemically amplified resists, Optical lithography, Photoresist processing, Control systems, Photoresist materials

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Proceedings Article | 14 May 2007 Paper

Process latitude dependency on local photomask haze defect in 70-nm binary intensity mask

Young-Min Kang, Sung-Jin Kim, Jin-Back Park, Wook Chang, Seung-Wook Park, Jai-Soon Kim, Han-Koo Cho, Hye-Keun Oh

Proceedings Volume 6607, 660720 (2007) https://doi.org/10.1117/12.728983

KEYWORDS: Air contamination, Photomasks, Phase shifts, Electroluminescence, Binary data, Reticles, Semiconducting wafers, Critical dimension metrology, Semiconductors, Crystals

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Proceedings Article | 22 March 2007 Paper

32-nm pattern collapse modeling with radial distance and rinse speed

Jong-Sun Kim, Wook Chang, Seoung-Wook Park, Hye-Keun Oh, Suk-Joo Lee, Sung-Hyuk Kim

Proceedings Volume 6519, 65193Y (2007) https://doi.org/10.1117/12.712220

KEYWORDS: Liquids, Semiconducting wafers, Mathematical modeling, Capillaries, Lithography, Electronics, Chemically amplified resists, Optical lithography, Applied physics, Semiconductors

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Proceedings Article | 21 March 2007 Paper

Characteristics and prevention of pattern collapse in EUV lithography

Wook Chang, Eun-Jin Kim, Young-Min Kang, Seung-Wook Park, Chang-Moon Lim, Ki-Tak Won, Jai-Soon Kim, Hye-Keun Oh

Proceedings Volume 6517, 65172S (2007) https://doi.org/10.1117/12.712469

KEYWORDS: Extreme ultraviolet, Deep ultraviolet, Extreme ultraviolet lithography, Lithography, Liquids, Semiconductors, Ultraviolet radiation, Adhesives, Optical lithography, Autoregressive models

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Proceedings Article | 21 March 2007 Paper

Photoresist adhesion effect of resist reflow process

Joon-Min Park, Ji-Eun Lee, Moon-Seok Kim, Jung-Hun Kim, Jai-Soon Kim, Sung-Muk Lee, Jun-Tack Park, Chul-Kyu Bok, Seung-Chan Moon, Seung-Wook Park, Joo-Yoo Hong, Hye-Keun Oh

Proceedings Volume 6519, 65193O (2007) https://doi.org/10.1117/12.712498

KEYWORDS: Photoresist processing, Photoresist materials, Semiconductors, Glasses, Thin films, Lithography, Physics, Chemistry, Computer simulations, Applied physics

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Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Proceedings Article | 24 March 2006 Paper

The effect of transmission reduction by reticle haze formation

Sung-Jin Kim, Jai-Sun Kyoung, Jin-Back Park, Young-Hoon Kim, Seung-Wook Park, Il-Sin An, Hye-Keun Oh

Proceedings Volume 6152, 61524B (2006) https://doi.org/10.1117/12.656284

KEYWORDS: Air contamination, Photomasks, Transmittance, Critical dimension metrology, Spectroscopic ellipsometry, Ellipsometry, Reticles, Phase shifts, Binary data, Lithography

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Proceedings Article | 15 March 2006 Paper

Optimization of chromeless phase mask by comparing scattering bars with zebra patterns

Hye-Young Kang, Ji-Eun Lee, Eun-A Kwak, Eun-Jin Kim, Seung-Wook Park, Sung-Hyuck Kim, Dong-Soo Shin, HeeJun Jeong, Hye-Keun Oh

Proceedings Volume 6154, 615429 (2006) https://doi.org/10.1117/12.656145

KEYWORDS: Photomasks, Scattering, Optical proximity correction, Electroluminescence, Resolution enhancement technologies, Phase shifts, Lithography, Chromium, Lithographic illumination, Binary data

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Resolution enhancement technology (RET) refer to techniques that extend the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination (OAI) and phase shift mask (PSM) are essentially accompanied with optical proximity correction (OPC) for most devices nowadays. In general, these three techniques do not work in isolation and the most aggressive mainstream lithography approaches use combinations of all RETs. In fact, OAI and PSM are essentially useless for typical chip-manufacturing applications unless accompanied by OPC. For low k₁ imaging, strong OAI such as Quasar or dipole illumination types is the best. We used dipole illumination in this study. By using strong OAI, the amplitude of the 0^th order is decreased and the amplitude of the 1^st order is increased. Chromeless phase lithography (CPL) is one of PSM technologies and CPL mask is the possible solution for small geometry with low mask error enhancement factor (MEEF). CPL uses only 180 degrees phase-shifter on transparent glass without chromium film to define light-shielding region, destructive interference between light transmitted through the 0 degree and 180 degrees regions produces dark images. To obtain the best resolution, proper OPC is required with CPL. While the most common and straightforward application of OPC is to simply move absorber edges on the mask by giving simple mask bias, the interesting and important additional technique is the use of scattering bars. Also, we can use zebra patterns for the transmission control. Mask intensity transmission changes can impact the image quality. Zebra patterns are formed by adding chromium transverse features. The transmission will be controlled by the zebra pattern density. Technology node with ArF source is studied and the mask optimization is found to be a critical. And the linewidth of scattering bars, transmission (using zebra feature) are varied at line and space (L/S) patterns. We used 65 nm node 5 L/S and 45 nm node isolated line pattern. In order to optimize the zebra pattern density, we need to control the line width and pitch of the zebra patterns. For dense line and isolated line, the use of scattering bars and zebra patterns affected target critical dimension. We found out the better process window at dense 65 nm node by comparing the use of scattering bars with zebra patterns. Likewise, we optimized the isolated 45 nm node.

Proceedings Article | 9 November 2005 Paper

Reticle haze measurement by spectroscopic elipsometry

Young-Hoon Kim, Seong-Jin Kim, Jin-Back Park, Mi-Lim Jung, Sung-Hyuck Kim, Seung-Wook Park, Jai-Sun Kyoung, Il-Sin An, Hye-Keun Oh

Proceedings Volume 5992, 59924L (2005) https://doi.org/10.1117/12.632375

KEYWORDS: Air contamination, Reticles, Photomasks, Ellipsometry, Transmittance, Inspection, Spectroscopic ellipsometry, Spectroscopy, Semiconductors, Atomic force microscopy

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Proceedings Article | 12 May 2005 Paper

The evaluation of aberration effects according to pattern shape and duty ratio

Ji-Eun Lee, Seung-Wook Park, Chang-Ho Lee, Hyun-Wook Oh, So-Yoon Bae, Hye-Keun Oh

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600470

KEYWORDS: Monochromatic aberrations, Distortion, Spherical lenses, Scattering, Light sources, Lithography, Light scattering, Critical dimension metrology, Projection systems, Zernike polynomials

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Proceedings Article | 28 May 2004 Paper

Simple 157-nm interference illumination system for pattern formation

Seung-Wook Park, Jang-hwan Jeong, Jung-wook Choi, Hye-keun Oh, Jaesoon Kim, Inho Park

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536180

KEYWORDS: Mirrors, Excimer lasers, Lithography, Semiconductors, Semiconducting wafers, Lithographic illumination, Absorption, Polymethylmethacrylate, Photoresist processing, Imaging systems

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Proceedings Article | 20 May 2004 Paper

Aerial image characterization for the defects in the extreme ultraviolet mask

Myoung-Sul Yoo, Seung-Wook Park, Jong-Hoi Kim, Yeong-Keun Kwon, Hye-Keun Oh

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.534851

KEYWORDS: Photomasks, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet, Silicon, Molybdenum, Chromium, Lithography, Optical lithography, Reflectivity

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Proceedings Article | 29 April 2004 Paper

Simulation benchmarking for the whole resist process

Sang-Kon Kim, Ji-Eun Lee, Seung-Wook Park, Ji-Yong Yoo, Hye-keun Oh

Proceedings Volume 5378, (2004) https://doi.org/10.1117/12.536210

KEYWORDS: Lithography, Picture Archiving and Communication System, Computer simulations, Scanning electron microscopy, Photoresist processing, Coating, Optical lithography, Diffusion, Etching, Liquids

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Proceedings Article | 12 June 2003 Paper

Practical extracting method of PEB parameters by using rotating compensator spectroscopic ellipsometer

Hyoung-Hee Kim, Young-Keun Kwon, Seung-Wook Park, Kyung-Yoon Bang, Ilsin An, Kun-Sang Lee, Hye-Keun Oh

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485071

KEYWORDS: Lithography, Polymers, Spectroscopy, Refractive index, Chemical reactions, Statistical analysis, Thin films, Photoresist processing, Absorption, Photorefractive polymers

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Proceedings Article | 7 June 1996 Paper

Image and resist profile by sublayer variation in deep-UV lithography

Hye-Keun Oh, So-Yeon Baek, Seung-Wook Park, Kun-Sang Lee

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240960

KEYWORDS: Photomasks, Deep ultraviolet, Lithography, Photoresist processing, Oxides, Super resolution, Binary data, Optical lithography, Image filtering, Antireflective coatings

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Proceedings Article | 17 May 1994 Paper

Exposure of a halftone mask by conventional and off-axis illumination

Hye-Keun Oh, Jung-Woung Goo, Sug-Soon Yim, Tak-Hyun Yoon, Seung-Wook Park, Byoung Sub Nam, Hoyoung Kang, Cheol-Hong Kim, Woo-Sung Han

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175421

KEYWORDS: Halftones, Photomasks, Binary data, Lithography, Phase shifting, Lithographic illumination, Computer simulations, Optical lithography, Photoresist processing, X-ray technology

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Showing 5 of 18 publications

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