The effects on the overall device noise of a small number of defects in device sections with a strong transfer impedance
coupling to the device terminals is discussed using advanced bulk and silicon-on-insulator n channel MOSFETs and
silicon nanowires as examples. From the measured noise and current-voltage data, the precise physical location of the
noise centers is determined. Potential noise reduction methods are discussed.
A method for increasing the specificity of an MR image using noise correlation measurements is presented. From an MR image different regions within the body are identified based on contrast. Noise signals measured at the ports of the experimental setup are functions of the conductivity at each region and the sensitivity map of the field probes. For a simulated sensitivity map, the ratio of conductivities of two regions of a phantom containing saline and distilled water was determined from the measured noise correlation at the ports.