Dr. Shannon B. Hill Profile

Dr. Shannon B. Hill

Physicist at National Institute of Standards and Technology

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Publications (15)

Proceedings Article | 16 March 2015 Paper

Development and evaluation of interface-stabilized and reactive-sputtered oxide-capped multilayers for EUV lithography

Michael Kriese, Yuriy Platonov, Jim Rodriguez, Gary Fournier, Steven Grantham, Charles Tarrio, John Curry, Shannon Hill, Thomas Lucatorto

Proceedings Volume 9422, 94220K (2015) https://doi.org/10.1117/12.2085934

KEYWORDS: Multilayers, Reflectivity, Extreme ultraviolet lithography, Extreme ultraviolet, Annealing, Resistance, Oxides, Reflectometry, Silicon, Oxidation

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Proceedings Article | 13 March 2015 Paper

Collaborative work on reducing the intersite gaps in outgassing qualification

Soichi Inoue, Eishi Shiobara, Takeshi Sasami, Isamu Takagi, Yukiko Kikuchi, Toru Fujimori, Shinya Minegishi, Robert Berg, Thomas Lucatorto, Shannon Hill, Charles Tarrio, Ivan Pollentier, Yen-Chih Lin, Yu-Jen Fan, Dominic Ashworth

Proceedings Volume 9422, 942212 (2015) https://doi.org/10.1117/12.2085700

KEYWORDS: Semiconducting wafers, Contamination, Picosecond phenomena, Temperature metrology, Extreme ultraviolet, Molecules, Extreme ultraviolet lithography, Electron beams, Standards development, Lithography

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Proceedings Article | 1 April 2013 Paper

Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV

I. Pollentier, R. Lokasani, R. Gronheid, S. Hill, C. Tarrio, T. Lucatorto

Proceedings Volume 8679, 86790K (2013) https://doi.org/10.1117/12.2011541

KEYWORDS: Semiconducting wafers, Contamination, Electrons, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist materials, Photons, Mirrors, Beam shaping, EUV optics

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EUV photoresists are considered as a potential source of optics contamination, since they introduce irradiation induced outgassing in the EUV vacuum environment. Therefore, before these resists can be used on e.g. ASML NXE:3100 or NXE:3300, they need to be tested in dedicated equipment according to a well-defined procedure, which is based on exposing a witness sample (WS) in the vicinity of a simultaneously exposed resist as it outgasses. Such an outgassing test infrastructure is available at many sites, but exposure modes on the witness sample and wafer can be significantly different, which potentially could lead to different test results. In this investigation, we first explored in more detail the relationship between resist outgassing as measured by RGA (Residual Gas Analysis) and the carbon growth obtained in the WS test. A good correlation was found by using a timeintegrated and mass-weighted sum of the RGA-measured mass peaks. Next, the impact of the resist exposure mode on the WS contamination result was investigated at imec, where the outgas test setup allows to expose the wafer with EUV irradiation as well as electrons in the same vacuum environment. It was found that minor differences observed in the WS test results, can be explained by adequate characterization of exposure intensity distribution and dose control. Finally the WS test results at imec from the different exposure modes were compared to the test results at NIST. The small differences in contamination that were observed could be explained by differences in test procedure, by using the time dependent RGA approach. From the combined work on outgassing measurements and WS contamination testing we have significantly improved our understanding of the relationship between outgassing and contamination processes induced by EUV photons and electrons. We have also demonstrated how to compare results obtained at different outgas testing sites, which is important in quantifying the potential risk to EUV device manufacturing posed by resist outgassing.

Proceedings Article | 1 April 2013 Paper

Effects of varying the parameters in witness-sample-based photoresist outgas testing: dependence of the carbon growth on pumping speed and the dose, time, and area of resist exposure

C. Tarrio, R. Berg, S. Hill, S. Grantham, N. Faradzhev, T. Lucatorto

Proceedings Volume 8679, 867920 (2013) https://doi.org/10.1117/12.2011663

KEYWORDS: Semiconducting wafers, Carbon, Extreme ultraviolet, Contamination, Photoresist materials, Extreme ultraviolet lithography, Mirrors, Molecules, Manufacturing, Scanners

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Proceedings Article | 26 March 2011 Paper

The NIST EUV facility for advanced photoresist qualification using the witness-sample test

S. Grantham, C. Tarrio, S. Hill, L. Richter, T. Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff

Proceedings Volume 7969, 79690K (2011) https://doi.org/10.1117/12.879519

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Photoresist materials, Extreme ultraviolet, Contamination, Scanners, Electrons, Mirrors, Carbon, Synchrotrons

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Proceedings Article | 26 March 2011 Paper

Optics contamination studies in support of high-throughput EUV lithography tools

S. Hill, N. Faradzhev, L. Richter, S. Grantham, C. Tarrio, T. Lucatorto, S. Yulin, M. Schürmann, V. Nesterenko, T. Feigl

Proceedings Volume 7969, 79690M (2011) https://doi.org/10.1117/12.879852

KEYWORDS: Contamination, Extreme ultraviolet lithography, Extreme ultraviolet, EUV optics, Carbon, Molecules, Synchrotrons, Mirrors, Ruthenium, Spectroscopic ellipsometry

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Proceedings Article | 23 March 2010 Paper

A simple null-field ellipsometric imaging system (NEIS) for in-situ monitoring of EUV-induced deposition on EUV optics

Rashi Garg, Nadir Faradzhev, Shannon Hill, Lee Richter, P. S. Shaw, R. Vest, T. Lucatorto

Proceedings Volume 7636, 76361Z (2010) https://doi.org/10.1117/12.855967

KEYWORDS: Carbon, EUV optics, Imaging systems, Extreme ultraviolet, Extreme ultraviolet lithography, Dielectrics, Polarizers, Ellipsometry, Contamination, Thin films

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Proceedings Article | 20 March 2010 Paper

Complex species and pressure dependence of intensity scaling laws for contamination rates of EUV optics determined by XPS and ellipsometry

S. Hill, N. Faradzhev, L. Richter, T. Lucatorto

Proceedings Volume 7636, 76360E (2010) https://doi.org/10.1117/12.846849

KEYWORDS: Contamination, Extreme ultraviolet lithography, Carbon, Molecules, Extreme ultraviolet, Protactinium, EUV optics, Adsorption, Synchrotrons, Electrons

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Proceedings Article | 18 March 2009 Paper

Measuring the EUV-induced contamination rates of TiO2-capped multilayer optics by anticipated production-environment hydrocarbons

S. Hill, N. Faradzhev, C. Tarrio, T. Lucatorto, R. Bartynski, B. Yakshinskiy, T. Madey

Proceedings Volume 7271, 727113 (2009) https://doi.org/10.1117/12.814111

KEYWORDS: Contamination, Extreme ultraviolet lithography, Protactinium, Molecules, Extreme ultraviolet, Reflectivity, Carbon, Synchrotrons, Molecular interactions, Titanium dioxide

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Proceedings Article | 20 March 2008 Paper

Accelerated lifetime metrology of EUV multilayer mirrors in hydrocarbon environments

S. Hill, N. Faradzhev, C. Tarrio, T. Lucatorto, T. Madey, B. Yakshinskiy, E. Loginova, S. Yulin

Proceedings Volume 6921, 692117 (2008) https://doi.org/10.1117/12.772627

KEYWORDS: Reflectivity, Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Carbon, Ruthenium, Reflectometry, Solids, Molecules, Oxidation

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Proceedings Article | 20 March 2008 Paper

Quantitative measurement of outgas products from EUV photoresists

C. Tarrio, B. Benner, R. Vest, S. Grantham, S. Hill, T. Lucatorto, J. Hendricks, P. Abbott, G. Denbeaux, C. Mbanaso, A. Antohe, K. Orvek, K.-W. Choi

Proceedings Volume 6921, 69211H (2008) https://doi.org/10.1117/12.772686

KEYWORDS: Semiconducting wafers, Molecules, Extreme ultraviolet lithography, Photoresist materials, Statistical analysis, Extreme ultraviolet, Capacitance, EUV optics, Mass spectrometry, Chemical analysis

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Proceedings Article | 19 March 2007 Paper

Critical parameters influencing the EUV-induced damage of Ru-capped multilayer mirrors

S. Hill, I. Ermanoski, C. Tarrio, T. Lucatorto, T. Madey, S. Bajt, M. Fang, M. Chandhok

Proceedings Volume 6517, 65170G (2007) https://doi.org/10.1117/12.712286

KEYWORDS: Reflectivity, Mirrors, Extreme ultraviolet lithography, Extreme ultraviolet, Carbon, Silicon, Ruthenium, Electrons, Ions, Oxidation

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Proceedings Article | 23 March 2006 Paper

EUV testing of multilayer mirrors: critical issues

S. Hill, I. Ermanoski, S. Grantham, C. Tarrio, T. Lucatorto, T. Madey, S. Bajt, M. Chandhok, P. Yan, O. Wood, S. Wurm, N. Edwards

Proceedings Volume 6151, 61510F (2006) https://doi.org/10.1117/12.656502

KEYWORDS: Mirrors, Extreme ultraviolet, Reflectivity, Carbon monoxide, Extreme ultraviolet lithography, Molecules, EUV optics, Carbon, Reflectometry, Synchrotrons

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Proceedings Article | 9 November 2005 Paper

Evaluation of alternative capping layers for EUVL mask ML blank

Pei-yang Yan, Eberhard Spiller, Eric Gullikson, Shannon Hill

Proceedings Volume 5992, 59923Z (2005) https://doi.org/10.1117/12.637599

KEYWORDS: Reflectivity, Extreme ultraviolet lithography, Ruthenium, Photomasks, Ultraviolet radiation, Oxygen, Silicon, Extreme ultraviolet, Etching, Oxidation

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Proceedings Article | 6 May 2005 Paper

EUV component and system characterization at NIST for the support of extreme-ultraviolet lithography

S. Grantham, S. Hill, C. Tarrio, R. Vest, T. Lucatorto

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599528

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Sensors, Calibration, Metrology, Silicon, Radiometry, Lithography, Photodiodes, Multilayers

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Showing 5 of 15 publications

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