Vertically aligned zinc oxide (ZnO) nanostructures (NS) have been fabricated without any catalyst on Si (100) and sapphire (0002) substrates using high-pressure-assisted pulsed laser deposition technique. It has been observed that the substrate plays a crucial role in deciding the morphology and optical quality of the nanostructures, wherein ZnO NS on Si substrate exhibit better luminescence characteristics as compared to those grown on sapphire substrate. Gallium nitride (GaN) layers are grown using a customized laser molecular beam epitaxy system and the effect of an intermediate layer in the form of vertically aligned ZnO NS is analyzed. A comparative study is performed with GaN layers grown on ZnO NS-coated Si, bare Si, and bare sapphire substrate. The structural and room temperature photoluminescence properties of the GaN layer significantly improve when grown on ZnO-NS/Si substrates as compared to bare sapphire and Si substrate.
GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.
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