PROCEEDINGS ARTICLE | February 21, 2018
Proc. SPIE. 10542, High Contrast Metastructures VII
KEYWORDS: Laser sources, Lithography, Refractive index, Cladding, Etching, High power lasers, Gallium arsenide, Photonic crystals, Semiconductor lasers, Gallium arsenide lasers, Group III-V semiconductors
Photonic crystal (PhC) laser, with specific merits of low astigmatism, single mode operation and integration into silicon photonic system, has been studied for many years. Compared with the edge emitting lasers (EELs), surface emitting light emitters have many advantages such as small and symmetric divergence angle and platform of array-based capability. The resonance along in-plane direction preserves the high modal gain to overcome optical loss and leads to lasing action. These photonic crystal designs which has superior essential performance to that of next-generation light sources which can propose to tunable lasing multi-wavelengths with polarization control and single-mode high beam-quality. In this report, we demonstrate the fabricated realization of a novel electrically driven high-power PhC laser incorporating indium-tin-oxide (ITO) layer as a newly designed cladding layer, which could improve the laser characteristics and achieve the much lower cost of the integrated optoelectronic application. The series of investigated actual nanofabrication lasing devices with distinct designs were observed to verify the structural parameters including grating periods and area regions by tailoring the photonic crystal structure. Based upon experimental results, lasing characteristics through high current injection at room temperature inclusive of I-V curves, L-I curves, near/far field patterns, and lasing spectra were characterized and discussed. We believe this practical watt-level light output achievement should have an impact on numerous photonic devices of the coherent operations and helpful attribution to the two-dimension integrated platform in the future.
