Molecular resists are expected to offer the advantages of high resolution and low line width roughness (LWR) for the
next-generation lithography. We developed a new molecular resist that showed high resolution by introducing an
efficient acid-leaving group to an amorphous molecule, 1,3,5-Tris(p-(p-hydroxy- phenyl) phenyl) benzene (THTPPB).
The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a
suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group,
hyperlactyl vinyl ether group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch 36 nm line-and-space (1:1) positive pattern was fabricated using 100 keV EB with chemically amplified molecular resist based on HPVETPPB.
A novel molecular resist based on a new amorphous molecule, a truxene derivative, was designed and synthesized.
Truxene is characterized as an amorphous solid with a high glass transition temperature (Tg). 70 nm line-and-space (1 : 1) positive pattern was fabricated by the exposure of a low-energy electron beam (5 keV) using the new molecular resist.
The new molecular design of resists based on the truxene derivative is promising with regard to development of more
efficient molecular resists.