CONFERENCE PROCEEDINGS
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Shih Cheng Huang
at Advanced Optoelectronic Technology Inc
SPIE Involvement:
Author
Publications (5)
Proceedings Article | 28 February 2012 Paper
Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer
Proceedings Volume 8262, 82621L (2012) https://doi.org/10.1117/12.909580
KEYWORDS: Light emitting diodes, Ultraviolet radiation, Gallium nitride, Internal quantum efficiency, Metalorganic chemical vapor deposition, Ultraviolet light emitting diodes, Transmission electron microscopy, Luminescence, Indium gallium nitride, Quantum efficiency
Proceedings Article | 28 February 2012 Paper
High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer
Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Ya-Wen Lin, Chih-Peng Hsu
Proceedings Volume 8262, 826221 (2012) https://doi.org/10.1117/12.908146
KEYWORDS: Light emitting diodes, Gallium nitride, Ultraviolet radiation, Internal quantum efficiency, Transmission electron microscopy, Ultraviolet light emitting diodes, Metalorganic chemical vapor deposition, Indium gallium nitride, Scanning electron microscopy, Luminescence
Proceedings Article | 6 February 2012 Paper
Investigation of efficiency droop for UV LED with N-type AlGaN layer
Po-Min Tu, Jet-Rung Chang, Shih-Cheng Huang, Shun-Kuei Yang, Ya-wen Lin, Tzu-Chien Hung, Chih-Peng Hsu, Chun-Yen Chang
Proceedings Volume 8278, 82781B (2012) https://doi.org/10.1117/12.908266
KEYWORDS: Light emitting diodes, Ultraviolet light emitting diodes, Gallium nitride, Atomic force microscopy, Crystals, External quantum efficiency, Absorption, Quantum efficiency, Sapphire, Aluminum
Proceedings Article | 6 February 2012 Paper
Power enhancement of 380 nm UV-LED with hexagonal pyramid structures by AlN sacrificial layer
Tzu-Chien Hung, Po-Min Tu, Shih-Cheng Huang, Chia-Hui Shen, Chih-Peng Hsu
Proceedings Volume 8278, 82780S (2012) https://doi.org/10.1117/12.908330
KEYWORDS: Light emitting diodes, Aluminum nitride, Scanning electron microscopy, Electroluminescence, Gallium nitride, Wet etching, Etching, Near ultraviolet, Silica, Electron microscopes
Proceedings Article | 12 February 2010 Paper
Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures
Dong-Sing Wuu, Wen-Yu Lin, Ying-Chiuan Tsai, Shih-Cheng Huang, Ray-Hua Horng, Chien-Min Liu
Proceedings Volume 7617, 76171H (2010) https://doi.org/10.1117/12.845439
KEYWORDS: Light emitting diodes, Gallium nitride, Near ultraviolet, Crystals, Metalorganic chemical vapor deposition, Silica, Crystal optics, Transmission electron microscopy, Interfaces, Indium gallium nitride
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