When a plastic substrate is under a highlight, the reflected light on the substrate always dazzles the observer. To prevent
the effect, anti-reflected (AR) coating is applied. However AR-coating is difficult to be designed with wide wavelength
range. In this research, the discontinuous metallic films were fabricated on the plastic substrates to reduce the reflection
of the plastic substrates with wide wavelength range. To reduce more reflectance, the discontinuous metallic film can
also be applied as the mask of selective ion etching to achieve rough surface. The results show the average reflectance of
the AR-coating on the plastic substrates has been decreased 5%. The average transmittance has been increased 3%.
A novel technique was proposed to fabricate a three-dimensional photonic crystal by self-assembling microspheres and the autocloning technology. The autocloning thin-film layers were superimposed on the prepared two-dimensional structural substrates using self-assembled microspheres. The thin-film process allows the three-dimensional periodic structure to be easily modified in the thickness dimension to structure as needed. We analyzed the etching effect using the unified process model according to the surface movement and surface velocity of the film to achieve the surface profile of the SiO2 adjusting layer. Finally, 17 layers of Ta2O5/SiO2 multilayers were stacked on the SiO2 adjusting layer successfully.
SiO<sub>x</sub>(x~1) films were prepared by the ion-assisted deposition (IAD) process. The films were evaporated from
silicon monoxide with and without simultaneous Ar<sup>+</sup> bombardment. As analyzed by using X-ray diffraction and
transmission electron microscopy measurements, the films showed amorphous structures. The stoichiometry of each
film was determined by using both infrared spectrometry and X-ray photoelectron spectrometry. The results revealed
that the oxygen content of the SiO<sub>x</sub> thin films was slightly varied under the different conditions of Ar+ bombardment.
The optical constants of the SiO<sub>x</sub> thin films in the mid-infrared range were measured using an infrared variable angle
spectroscopic ellipsometer. The variation of these refracting indices was mainly related to the packing density. The
results presented in this work showed the possibilities of controlling the stoichiometry and the refracting index of the
SiO<sub>x</sub> thin film by the application of IAD process.