From the point of view of its fundamental properties, solid solution Hg<sub>1-x</sub>Cd<sub>x</sub>Te (0 less than or equal to x less than or equal to l) (MCT) is one of very attractive
materials of infrared optoelectronics and has received considerable attention over the past forty odd years. In the early 90s,
bulk growth of MCT was phased out for the routine production of first generation photo-conductive devices. But it is hard
process to growth MCT single crystals with homogeneous composition. This fact determined a vital importance change in
the MCT technology during the last decade which first at all induced by the mostly replacement of bulk growth by epitaxial
technologies (LPE, MBE, VPE etc.).
The principle of construction of the multi-channel IR-CCD on the basis of vary-gap semiconductor have been considered. On an example of HgTe-CdTe solid solutions is shown, that grown epitaxial layers repeats of substrate form at using semiconductor substrate of special construction. By the subsequent treatment of the surface of obtained structure, it can be reached that the forbidden band energy in the plane of structure for each channel of device was constant (E<SUB>g</SUB>=const), but is different for these channels due to gradient of E<SUB>g</SUB> on thickness of epitaxial layer, which the range of spectral sensitivity of CCD channels are defined. Some peculiarities of technology for manufacturing such structures have been represented, also.