Zinc Oxide nanostructures are capable of applying numerous applications such as optoelectronics, sensors, varistors,
and electronic devices. There are several techniques to gorw ZnO nanostructures, including vapor-liquid-solid method,
chemical vapor deposition, physical vapor deposition, metal organic chemical vapor deposition and solution process.
Recently reported solution method is a simple way to grow ZnO nanowires at a low temperature. One distinctive
advantage with the solution method is low processing temperature so that flexible polymer materials can be used as a
substrate to grow ZnO nanowires. In this study, ZnO nanowires have been fabricated on PET film by solution method
with various molarities to see the effect of different molarities on ZnO nanowire growth. The solution temperature was
80°C and ZnO nanowires were grown for 6 hours for each case. The ZnO seed layer was sputtered at room temperature
for 33 min. prior to ZnO nanowire growth. These ZnO nanowires were characterized by X-ray diffraction (XRD),
Scanning Electron Microscopy (SEM), and photoluminescence (PL) measurements at room temperature using a He-Cd
325-nm laser as the excitation source. We also measured the current using current Atomic Force Microscopy (I-AFM)
and presented the possibility to use ZnO nanowires as a power source for micro/nano scale devices. As a result, we found
that the characterization of ZnO nanowires changes according to the solution molarity.