Variations in manufacturing process introduce uncertainties optical proximity correction. Discrepancies may arise between model extraction and the actual manufacturing conditions. An optimally constructed mask should minimize the sensitivity of line width variation in lithography and prevent pattern failure such a line pinch-off. In this paper, the effect of defocus on OPC mask and wafer patterning is investigated using a physical pattern transfer simulator, LithoScope. We evaluate the impact of defocus on a set of special test patterns and on a real circuit layout. We propose to control defocus effect by a combination of proper design centering and physical model-based data verification.
Variations in manufacturing process introduce uncertainties in model based optical proximity correction. Discrepancies may arise between the model description and the actual manufacturing condition. Optimal mask correction should minimize the sensitivity of line width variation as the lithography process variables change within the accepted range. In this paper, the effect of defocus on OPC mask and wafer patterning is investigated using a physical pattern transfer simulator, LithoScope. We evaluate the impact of defocus on a set of test patterns and on real circuit layout. We propose to control defocus effect by design centering and physical model-based verification.
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