Mr. Shinji Akima Profile

Shinji Akima

at Toppan Chunghwa Electronics Co Ltd

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 27 June 2019 Paper

Paper

The study of relationship between defect sensitivity and inspectability on EUV masks with 19x nm mask inspection

Masashi Yonetani, Karen Badger, Jed Rankin, Shinji Akima, Yusuke Toda, Itaru Yoshida, Masayuki Kagawa, Takeshi Isogawa, Yutaka Kodera, Jan Heumann, Anka Birnstein

Proceedings Volume 11178, 111780D (2019) https://doi.org/10.1117/12.2537430

KEYWORDS: Inspection, Extreme ultraviolet, Defect inspection, Photomasks, Opacity, Optical inspection, Signal detection, Critical dimension metrology, Extreme ultraviolet lithography, Defect detection

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Proceedings Article | 5 October 2016 Paper

Paper

Defect inspection and printability study for 14 nm node and beyond photomask

Kazunori Seki, Masashi Yonetani, Karen Badger, Dan Dechene, Shinji Akima

Proceedings Volume 9985, 99851Y (2016) https://doi.org/10.1117/12.2243514

KEYWORDS: Inspection, Defect inspection, Photomasks, Semiconducting wafers, Critical dimension metrology, Defect detection, Optical inspection, Extreme ultraviolet, Wafer inspection, Lithography

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SPIE Journal Paper | 18 March 2016

Evaluation of multilayer defect repair viability and protection techniques for extreme ultraviolet masks

Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Zhengqing Qi, Jed Rankin, Shinji Akima

JM3, Vol. 15, Issue 02, 021010, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021010

KEYWORDS: Extreme ultraviolet, Photomasks, Semiconducting wafers, Multilayers, Critical dimension metrology, Lithography, Extreme ultraviolet lithography, Microscopes, Scanning electron microscopy, Manufacturing

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SPIE Journal Paper | 1 February 2016

Printability of buried extreme ultraviolet lithography photomask defects

Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen Badger, Zhengqing John Qi, Mark Lawliss, Jed Rankin, Ravi Bonam

JM3, Vol. 15, Issue 02, 021004, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021004

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect detection, Scanning electron microscopy, Extreme ultraviolet lithography, Wafer inspection, Multilayers, Visibility, Overlay metrology

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Proceedings Article | 23 October 2015 Paper

Paper

Evaluation of multilayer defect repair viability and protection techniques for EUV masks

Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Zhengqing John Qi, Jed Rankin, Shinji Akima

Proceedings Volume 9635, 963518 (2015) https://doi.org/10.1117/12.2197761

KEYWORDS: Photomasks, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Multilayers, Manufacturing, Microscopes, Lithography, Airborne remote sensing, Reflectivity

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Proceedings Article | 9 July 2015 Paper

Paper

ENDEAVOUR to understand EUV buried defect printability

Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen Badger, Zhengqing John Qi, Mark Lawliss, Jed Rankin, Ravi Bonam

Proceedings Volume 9658, 96580G (2015) https://doi.org/10.1117/12.2197763

KEYWORDS: Inspection, Semiconducting wafers, Photomasks, Scanning electron microscopy, Defect detection, Phase contrast, Extreme ultraviolet, Optical lithography, Visibility, Overlay metrology

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Proceedings Article | 28 July 2014 Paper

Paper

Screening EUV mask absorbers for defect repair

Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Emily Gallagher, Shinji Akima, Toshio Konishi

Proceedings Volume 9256, 92560N (2014) https://doi.org/10.1117/12.2070251

KEYWORDS: Etching, Extreme ultraviolet, Lawrencium, Photomasks, Semiconducting wafers, Microscopes, Critical dimension metrology, Bridges, Electron beams, Reflectivity

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Proceedings Article | 28 June 2013 Paper

Paper

Exploring probability of shallow ML defect impact to defect assurance

Kazuaki Matsui, Noriaki Takagi, Satoshi Takahashi, Yutaka Kodera, Yo Sakata, Shinji Akima

Proceedings Volume 8701, 87010Q (2013) https://doi.org/10.1117/12.2031845

KEYWORDS: Extreme ultraviolet, Photomasks, Inspection, Semiconducting wafers, Atomic force microscopy, Extreme ultraviolet lithography, Lithography, Device simulation, Defect detection, EUV optics

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Proceedings Article | 30 June 2012 Paper

Paper

Black border with etched multilayer on EUV mask

Norihito Fukugami, Kazuaki Matsui, Genta Watanabe, Takeshi Isogawa, Shinpei Kondo, Yutaka Kodera, Yo Sakata, Shinji Akima, Jun Kotani, Hiroaki Morimoto, Tsuyoshi Tanaka

Proceedings Volume 8441, 84411K (2012) https://doi.org/10.1117/12.965536

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Semiconducting wafers, Deep ultraviolet, Etching, Manufacturing, Inspection, Extreme ultraviolet lithography, Image processing

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Proceedings Article | 30 June 2012 Paper

Paper

Novel programmed defect mask blanks for ML defect understanding and characterization

Kazuaki Matsui, Takagi Noriaki, Isogawa Takeshi, Yutaka Kodera, Sakata Yo, Akima Shinji

Proceedings Volume 8441, 84411A (2012) https://doi.org/10.1117/12.975824

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Scanning electron microscopy, Lithography, Control systems, Atomic force microscopy, Mask making, Defect inspection, Double patterning technology

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Proceedings Article | 25 September 2010 Paper

Paper

Photomask Japan 2010 panel discussion overview

Yoshinori Nagaoka, Hiroshi Mohri, Shinji Akima

Proceedings Volume 7823, 782306 (2010) https://doi.org/10.1117/12.868534

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Proceedings Article | 26 May 2010 Paper

Paper

Defect inspection and repair performance comparisons between EUV and conventional masks

Kazunori Seki, Masafumi Shibita, Takashi Yoshii, Tsukasa Fujimoto, Yo Sakata, Shinji Akima

Proceedings Volume 7748, 774807 (2010) https://doi.org/10.1117/12.867754

KEYWORDS: Extreme ultraviolet, Photomasks, Inspection, Deep ultraviolet, Defect inspection, Scanning electron microscopy, Semiconducting wafers, 3D printing, Extreme ultraviolet lithography, Reflectivity

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Proceedings Article | 11 May 2009 Paper

Paper

The study of defect detection method for 32nm technology node and beyond

Kazunori Seki, Masafumi Shibita, Shinji Akima

Proceedings Volume 7379, 737928 (2009) https://doi.org/10.1117/12.824322

KEYWORDS: Inspection, Defect detection, Image transmission, Reticles, Photomasks, SRAF, Optical proximity correction, Contamination, Particles, Chromium

Read Abstract +

As a result of demand for ever decreasing of feature sizes in photomasks, inspection has become more important as a key element of manufacturing 32nm node and beyond. In order to provide a better solution for it, we have developed a new method to create programmed defects having attributes very similar to those seen in natural defects. We have named the new method as NLPD (Natural-Like Programmed Defect). One of the noteworthy features of NLPD is that it is possible to make reticles with different heights which have never been made by conventional method. Natural like defects are desirable for new inspection modes including ones using shorter wavelength and aerial plane inspection technology. These new inspection modes are equipped with recently released inspection tools. They are expected to meet the requirements which are needed by future advanced masks, and these requirements have been inadequately fulfilled with inspection tools for current generation masks. Those requirements include responding to currently dominant reticle types for 32nm node: CoG: 6% EPSM: and OMOG (Opaque MoSi On Glass). Other possible reticle types for 32nm node contain EUV, Enhancer, complex tri-tone, high transmission, and CPL. In the future, aggressive model based OPC (Optical Proximity Correction) will be typically used which include jogs, serifs, and SRAF (Sub-Resolution Assist Features) accompanying extremely small gaps between adjacent structures. When those advanced technologies are adopted, NLPD definitely contributes to making inspection more efficient and effective as evaluation method dealing with advanced inspection tools. This paper provides NLPD results with comparison of newly released inspection tools equipped with new inspection modes. The new inspection modes include hi-resolution inspection and aerial inspection which are designed to fulfill the requirements of inspection for advanced masks. These results confirm that hi-resolution inspection is suited for process development or improvement and aerial inspection is good for the volume production.

Proceedings Article | 15 May 2007 Paper

Paper

Impact of transmitted and reflected light inspection on mask inspectability, defect sensitivity, and mask design rule restrictions

Yutaka Kodera, Karen Badger, Emily Gallagher, Shinji Akima, Mark Lawliss, Hidehiro Ikeda, Ian Stobert, Yasutaka Kikuchi

Proceedings Volume 6607, 66072E (2007) https://doi.org/10.1117/12.728997

KEYWORDS: Inspection, Photomasks, Opacity, Optical proximity correction, SRAF, Semiconducting wafers, Defect inspection, Defect detection, Image quality, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Paper

Phase defect printability and mask inspection capability of 65-nm technology node Alt-PSM for ArF lithography (Photomask Japan Best Paper)

Shinji Akima, Tooru Komizo, Saburo Kawakita, Yutaka Kodera, Tsuyoshi Narita, Kiichi Ishikawa

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.580003

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Defect detection, Visibility, Lithography, Scanning electron microscopy, Atomic force microscopy, Phase shift keying, Image enhancement

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Proceedings Article | 17 December 2003 Paper

Paper

DUV inspection capability for 90-nm node mask in ArF lithography

Katsumi Ohira, Byung Gook Kim, Keishi Tanaka, Nobuyuki Yoshioka, Motonari Tateno, Naohisa Takayama, Shingo Murakami, Keiichi Hatta, Shinji Akima, Fuyuhiko Matsuo, Masao Otaki

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518293

KEYWORDS: Inspection, Photomasks, Lithography, Optical proximity correction, Deep ultraviolet, Semiconducting wafers, Binary data, Phase shifts, Chromium, Point spread functions

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Proceedings Article | 28 August 2003 Paper

Paper

Defect printability and inspection capability for tri-tone PSM

Yoshikazu Nagamura, Kazuyuki Maetoko, Kiyoshi Maeshima, Naohisa Tamada, Kunihiro Hosono, Masaya Fujimoto, Yutaka Kodera, Koji Goto, Tsuyoshi Narita, Fuyuhiko Matsuo, Shinji Akima, Mikio Ishijima, Hironobu Iwasaki, Yasutaka Kikuchi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504207

KEYWORDS: Inspection, Picosecond phenomena, Chromium, Calibration, Semiconducting wafers, Defect inspection, Photomasks, Defect detection, Critical dimension metrology, Phase shifts

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Proceedings Article | 28 August 2003 Paper

Paper

Inspection capability of high-transmittance HTPSM and OPC masks for ArF lithography

Motonari Tateno, Naohisa Takayama, Shingo Murakami, Keiichi Hatta, Shinji Akima, Fuyuhiko Matsuo, Masao Otaki, Byung-Gook Kim, Keishi Tanaka, Nobuyuki Yoshioka

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504206

KEYWORDS: Inspection, Photomasks, Optical proximity correction, Lithography, Binary data, Deep ultraviolet, Reticles, Databases, Detection and tracking algorithms, Algorithm development

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Proceedings Article | 27 December 2002 Paper

Paper

Mask inspection challenges for 90- and 130-nm device technology nodes: inspection sensitivity and printability study using SEMI standard programmed defect masks

Won Kim, Shinji Akima, Christopher Aquino, Charika Becker, Mark Eickhoff, Tsuyoshi Narita, Soo-Kim Quah, Peter Rohr, Robert Schlaffer, Junichi Tanzawa, Yoshiro Yamada

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468084

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Binary data, Lithography, Standards development, Printing, Defect detection, Photoresist processing, Wafer testing

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Proceedings Article | 11 March 2002 Paper

Paper

Optimization of ArF alternating phase-shifting mask structure for 100-nm node and inspection of phase defects

Kazuaki Chiba, Hiroyuki Takahashi, Wataru Nozaki, Shinji Akima, Susumu Nagashige, Yoshiro Yamada

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458319

KEYWORDS: Photomasks, Phase shifts, Inspection, Defect inspection, Critical dimension metrology, Defect detection, Process control, Reticles, Photomask technology, Control systems

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Proceedings Article | 5 September 2001 Paper

Paper

Manufacturing and inspection of assist-bar-type OPC mask

Masayoshi Tsuzuki, Wataru Nozaki, Shinji Akima, Jun Yoshida, Yuko Oi, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438399

KEYWORDS: Photomasks, Inspection, Optical proximity correction, Manufacturing, Binary data, Semiconducting wafers, Defect inspection, Critical dimension metrology, Scanning electron microscopy, Defect detection

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Proceedings Article | 30 December 1999 Paper

Paper

Detection and repair of multiphase defects on alternating phase-shift masks for DUV lithography

Susumu Nagashige, Kohki Hayashi, Shinji Akima, Hiroyuki Takahashi, Kazuaki Chiba, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373308

KEYWORDS: Inspection, Phase shifts, Quartz, Photomasks, Defect detection, Semiconducting wafers, Deep ultraviolet, Lithography, Atomic force microscopy, Etching

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Showing 5 of 22 publications

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