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Shiro Iwata
at Yamaguchi Univ
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Publications (1)
Proceedings Article | 26 November 2002 Paper
Growth of homoepitaxial GaN layers and GaN/AlGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy
Shuichi Kubo, Tomoyuki Tanabe, Masafumi Konishi, Shiro Iwata, Tsunekazu Saimei, Satoshi Kurai, Tsunemasa Taguchi, Keiji Kainosho, Akihito Yokohata
Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.452580
KEYWORDS: Gallium nitride, Crystals, Aluminum, Gallium, Single crystal X-ray diffraction, Quantum wells, Epitaxy, Luminescence, Nitrogen, X-rays
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