A ZnO based thin film transistor (TFT) with bottom-gate configuration and SiO<sub>2</sub> as insulating layer has been fabricated
and characterized. The ZnO thin film was prepared by spin coating the sol-gel solution on the p-type Si wafers. The
optical and structural properties of ZnO films were investigated using UV measurements and scanning electron
microscope (SEM). The result of UV-visible study confirms that the films have a good absorbance in UV region and
relatively low absorbance in the visible region. The TFT exhibited an off-current of 2.5×10<sup>-7</sup> A. The values of field effect
channel mobility and on/off current ratio extracted for the device, measured 11 cm<sup>2</sup>/V.s and ~10<sup>2</sup> respectively. The value
of threshold voltage was found to be 1.3 V.