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Shoma Ohtaki
at Tokyo Univ of Agriculture and Technology
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Publications (1)
Proceedings Article | 16 February 2020 Presentation + Paper
Dislocation density reduction in (101 1 ) GaN at a high temperature using tri-halide vapor phase epitaxy
Kenji Iso, Shoma Ohtaki, Erina Miyata, Yuka Kido, Hisashi Murakami, Akinori Koukitu
Proceedings Volume 11280, 1128009 (2020) https://doi.org/10.1117/12.2543661
KEYWORDS: Gallium nitride, Crystals, Vapor phase epitaxy, Luminescence, Scanning electron microscopy, Silicon, Oxygen, Gallium, Interfaces, Semiconducting wafers
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