A diffusion process controlled modelling of Titanium-indiffused Lithium Niobate (Ti: LiNbO3) channel waveguides
(of μm dimension) for Machzehnder Interferometer (MZI) switch has been presented. The effect of various
indiffusion process parameters e.g. dopant strip thickness, lateral and vertical diffusion length on the insertion loss has
been taken care of, to reduce the switch losses. Transition losses in the curved waveguides of the structure are also
minimized by selecting low loss bend structures to increase overall performance of the switch. The computed results
for switch performance are in good agreement with the published data.
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