Mr. Shubham Singh Profile

Shubham Singh

at AIS Roorkee

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 19 November 2019 Paper

High performance and CMOS compatible photonic switches based on phase change materials

Shubham Singh, Rajesh Kumar, Nadir Ali

Proceedings Volume 11184, 111840C (2019) https://doi.org/10.1117/12.2538866

KEYWORDS: Switches, Switching, Silicon, Optical communications, CMOS technology, Waveguides, Optical interconnects, Thermography, Crystals, Photonic crystals

Read Abstract +

Photonic switches based on phase change materials that are nonvolatile in nature and consume lesser power during switching process while having ultra-low footprint are emerging fast to address the challenges faced by modern interconnects. In addition to optical interconnects and optical communication at 1.55 μm wavelength, such devices are likely to be in great demand for emerging optical communication window around 2 μm wavelength. The switching in phase change materials can be triggered by electrical, optical or thermal means. One such material Ge₂Sb₂Te₅ is technologically mature, cost effective and compatible with CMOS fabrication technology. It can exist in amorphous as well as crystalline phase and remains stable in both the phases. It can be switched rapidly and repeatedly for realizing photonic switching devices around wavelengths 1.55 μm and 2.0 μm. By integrating Ge₂Sb₂Te₅ on silicon-on-insulator platform, the switching functionalities with high performance can be achieved. Here, we present various types of switches based on different hybrid Ge₂Sb₂Te₅-Silicon waveguide. Different geometries will be discussed for operational wavelengths of 1.55 μm and 2.0 μm. Different design strategies that lead to realization of high performance photonic switches in terms of extinction ratio, insertion loss, switching energy and re-configurability using ultra-compact Ge₂Sb₂Te₅ embedded within the silicon waveguide and having indium tin oxide electrodes are described in detail.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years