The basic properties of indium-zinc oxide (IZO) were investigated from the view point of the potential of light-emitting diodes (LEDs) for nanostructured transparent contact. The resistivity and contact resistance to p-GaN were obtained to be 2.5×10-4 Ωcm and 9.4×10-4 Ωcm2, respectively, which are comparable to those of indium-tin oxide (ITO). The light output of the LED with the moth-eye IZO was 10 % and 40 % higher than that of the LED with the moth-eye ITO and that of the LED without the moth-eye structure, respectively.