Mr. Shujian Liu Profile

Shujian Liu

at Virginia Commonwealth Univ

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 28 February 2012 Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. Smith, H. Morkoç

Proceedings Volume 8262, 826224 (2012) https://doi.org/10.1117/12.909235

KEYWORDS: Gallium nitride, Silicon, Sapphire, Metalorganic chemical vapor deposition, Optical properties, Scanning electron microscopy, Quantum wells, Light emitting diodes, Luminescence, Chemical vapor deposition

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Proceedings Article | 4 March 2011 Paper

Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes

H. Y. Liu, X. Li, S. Liu, X. Ni, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. Yankovich, A. Kvit, P. Voyles, M. Reshchikov, H. Morkoç

Proceedings Volume 7939, 79392E (2011) https://doi.org/10.1117/12.875515

KEYWORDS: Light emitting diodes, Oxygen, Surface roughness, Gallium nitride, Indium gallium nitride, Transmission electron microscopy, Electrodes, 3D metrology, External quantum efficiency, Transparent conducting oxide

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Proceedings Article | 4 March 2011 Paper

Impact of ballistic electron transport on efficiency of InGaN based LEDs

F. Zhang, X. Li, S. Liu, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, M. Kisin

Proceedings Volume 7939, 793917 (2011) https://doi.org/10.1117/12.875806

KEYWORDS: Light emitting diodes, Electron beam lithography, External quantum efficiency, Indium gallium nitride, Electron transport, Aluminum, Electroluminescence, Gallium nitride, Polarization, Phonons

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Proceedings Article | 19 February 2011 Paper

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. Smith, H. Morkoç

Proceedings Volume 7939, 79391W (2011) https://doi.org/10.1117/12.875861

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Sapphire, Metalorganic chemical vapor deposition, Scanning electron microscopy, Optical properties, Silica, Wet etching, Carbon

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