Pb0.9La0.09(Zr0.65,Ti0.35)0.9775O3 9/65/35) commonly used as an electro-optical shutter exhibits large phase retardation with low applied voltage. This shutter features as follows; (1) high shutter speed, (2) wide optical transmittance, and (3) high optical density in 'OFF'-state. If the shutter is applied to a diaphragm of video-camera, it could protect its sensor from intense lights. We have tested the basic characteristics of the PLZT electro-optical shutter and resolved power of imaging. The ratio of optical transmittance at 'ON' and 'OFF'-states was 1.1 X 103. The response time of the PLZT shutter from 'ON'-state to 'OFF'-state was 10 micro second. MTF reduction when putting the PLZT shutter in from of the visible video- camera lens has been observed only with 12 percent at a spatial frequency of 38 cycles/mm which are sensor resolution of the video-camera. Moreover, we took the visible image of the Si-CCD video-camera. The He-Ne laser ghost image was observed at 'ON'-state. On the contrary, the ghost image was totally shut out at 'OFF'-state. From these teste, it has been found that the PLZT shutter is useful for the diaphragm of the visible video-camera. The measured optical transmittance of PLZT wafer with no antireflection coating was 78 percent over the range from 2 to 6 microns.