Transparency conversion mechanism and laser induced fast response velocity of bimetallic Bi/In thin film is studied.
Heat-treatment and laser exposure with different pulse width induced transparency is investigated by using
ultraviolet-visible (UV-VIS) spectrometer, X-ray diffraction (XRD), Auger Electron Scan (AES), microscope and field
emission scanning electron microscopy (FESEM). Research results show that oxidation is regarded as the reason for heat
treated and long-pulsed laser exposure induced transparency conversion. Laser ablation is demonstrated to be the main
reason for short-pulsed (~7ns) laser induced transparency conversion. For Bi/In thin film covered with a protection layer
of (ZnS)<sub>0.85</sub>(SiO<sub>2</sub>)<sub>0.15</sub> thin film, it exhibit fast response as fast as less than 100ns. The conclusions contribute to
understanding and development of materials for thermal resist, photomask, optical storage medium and transparent
conductive oxide with better performance.