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Silja Ehrich
at Univ Duisburg-Essen
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Publications (1)
Proceedings Article | 25 May 2004 Paper
Investigation of the rf-noise behavior of InP-based DHBT with InGaAs base and GaAsSb base
Silja Ehrich, Stefan Neumann, Wolfgang Brockerhoff, Franz-Josef Tegude
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546981
KEYWORDS: Indium gallium arsenide, Composites, Resistance, Doping, Data modeling, Transistors, Antimony, Carbon, Modeling, Heterojunctions
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